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STGW30NC60WD价格
参考价格：￥13.9709
型号：STGW30NC60WD 品牌：STMicroelectronics 备注：这里有STGW30NC60WD多少钱，2025年最近7天走势，今日出价，今日竞价，STGW30NC60WD批发/采购报价，STGW30NC60WD行情走势销售排行榜，STGW30NC60WD报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STGW30NC60WD | N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH??IGBT Description This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antip | STMICROELECTRONICS 意法半导体 |   | |
STGW30NC60WD | 30 A, 600 V ultra fast IGBT Description This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery | STMICROELECTRONICS 意法半导体 | | |
STGW30NC60WD | N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH??IGBT 文件：306.03 Kbytes Page：14 Pages | STMICROELECTRONICS 意法半导体 | | |
STGW30NC60WD | 封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 60A 200W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | STMICROELECTRONICS 意法半导体 | | |
STGW30NC60WD | 30 A、600 V超快IGBT | STMICROELECTRONICS 意法半导体 | | |
30 A, 600 V ultra fast IGBT Description This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery | STMICROELECTRONICS 意法半导体 | | ||
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH??IGBT 文件：306.03 Kbytes Page：14 Pages | STMICROELECTRONICS 意法半导体 | | ||
30 A - 600 V - short circuit rugged IGBT Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 | STMICROELECTRONICS 意法半导体 | | ||
30 A - 600 V - short circuit rugged IGBT 文件：385.84 Kbytes Page：15 Pages | STMICROELECTRONICS 意法半导体 | | ||
30 A - 600 V - ultra fast IGBT 文件：461.61 Kbytes Page：16 Pages | STMICROELECTRONICS 意法半导体 | | ||
30 A - 600 V - short circuit rugged IGBT 文件：385.84 Kbytes Page：15 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-channel 30A - 600V - TO-247 - TO-220 Ultra fast switching PowerMESH TM IGBT 文件：306.18 Kbytes Page：14 Pages | STMICROELECTRONICS 意法半导体 | |
STGW30NC60WD产品属性
- 类型
描述
- 型号
STGW30NC60WD
- 功能描述
IGBT 晶体管 PowerMESH" IGBT
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
ST |
25+ |
原厂原封 |
16900 |
原装，请咨询 |
|||
ST/意法半导体 |
23+ |
N/A |
20000 |
||||
ST |
22+ |
TO2473 |
9000 |
原厂渠道,现货配单 |
|||
ST(意法半导体) |
24+ |
TO-247 |
928 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ST/意法 |
24+ |
NA/ |
14400 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
2526+ |
原厂封装 |
50000 |
15年芯片行业经验/只供原装正品:0755-83268919邹小姐 |
|||
ST |
24+ |
TO-247-3 |
112 |
||||
ST/意法半导体 |
21+ |
TO-247-3 |
8860 |
只做原装,质量保证 |
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全新原装现货 支持第三方机构验证
2022-6-7
DdatasheetPDF页码索引
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