Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Features

■ Low on-voltage drop (VCE(sat))

■ Low Cres / Cies ratio (no cross conduction susceptibility)

■ Short circuit withstand time 10 µs

■ IGBT co-packaged with ultra fast free-wheeling diode

Applications

■ High frequency inverters

■ Motor drivers