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STGB35N35LZ价格
参考价格：￥8.1803
型号：STGB35N35LZ-1 品牌：STMicroelectronics 备注：这里有STGB35N35LZ多少钱，2025年最近7天走势，今日出价，今日竞价，STGB35N35LZ批发/采购报价，STGB35N35LZ行情走势销售排行榜，STGB35N35LZ报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STGB35N35LZ | Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ Description This application specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automot | STMICROELECTRONICS 意法半导体 |   | |
STGB35N35LZ | Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ | STMICROELECTRONICS 意法半导体 | | |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ Description This application specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automot | STMICROELECTRONICS 意法半导体 | | ||
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ Description This application specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automot | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：管件 描述：IGBT 345V 40A 176W I2PAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 345V 40A 176W D2PAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | STMICROELECTRONICS 意法半导体 | | ||
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ Description This application specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automot | STMICROELECTRONICS 意法半导体 | |
STGB35N35LZ产品属性
- 类型
描述
- 型号
STGB35N35LZ
- 功能描述
IGBT 晶体管 345V INTERNALLY CLAMPED IGBT
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2447 |
TO-262 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ST |
22+ |
D2PAK |
9000 |
原厂渠道,现货配单 |
|||
ST |
15+PBF |
TO-262 |
23000 |
现货 |
|||
ST |
23+ |
TO-263 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ST |
25+ |
D2PAK |
37650 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
ST |
15+ |
TO-262 |
23000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST/意法 |
24+ |
TO-262 |
60000 |
全新原装现货 |
|||
ST |
23+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
|||
STMicroelectronics |
25+ |
N/A |
7500 |
原装现货17377264928微信同号 |
STGB35N35LZ芯片相关品牌
STGB35N35LZ规格书下载地址
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STGB35N35LZ数据表相关新闻
STGD5H60DF
进口代理
2023-4-24STF202-22T1G
STF202-22T1G
2023-4-20STGD10NC60KDT4
全新原装现货 支持第三方机构验证
2022-6-24STFW4N150
全新原装现货 支持第三方机构验证
2022-6-23STGD5H60DF
原装正品现货
2022-5-7STF40NF20 ST/意法 21+ TO-220F
https://hfx03.114ic.com/
2022-2-17
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