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STGP35N35LZ价格
参考价格：￥9.5601
型号：STGP35N35LZ 品牌：STMicroelectronics 备注：这里有STGP35N35LZ多少钱，2025年最近7天走势，今日出价，今日竞价，STGP35N35LZ批发/采购报价，STGP35N35LZ行情走势销售排行榜，STGP35N35LZ报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STGP35N35LZ | Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ Description This application specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automot | STMICROELECTRONICS 意法半导体 |   | |
STGP35N35LZ | 封装/外壳：TO-220-3 包装：管件 描述：IGBT 345V 40A 176W TO220 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | STMICROELECTRONICS 意法半导体 | | |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ Description This application specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automot | STMICROELECTRONICS 意法半导体 | |
STGP35N35LZ产品属性
- 类型
描述
- 型号
STGP35N35LZ
- 功能描述
IGBT 晶体管 EAS 450mJ 345V PowerMESH IGBT
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
N |
28000 |
原装现货只有原装.假一罚十 |
|||
ST |
23+ |
TO2203 |
8000 |
只做原装现货 |
|||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
||||
ST |
1926+ |
TO-220AB |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
ST全系列 |
25+23+ |
TO-220 |
26626 |
绝对原装正品全新进口深圳现货 |
|||
ST/意法半导体 |
25+ |
原厂封装 |
11000 |
||||
ST |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
ST |
23+ |
TO-220 |
16900 |
正规渠道,只有原装! |
|||
ST(意法半导体) |
24+ |
TO220 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
STMicroelectronics |
24+ |
NA |
3131 |
进口原装正品优势供应 |
STGP35N35LZ规格书下载地址
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全新原装现货 支持第三方机构验证
2022-6-7
DdatasheetPDF页码索引
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