Description

This application specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system.

Features

• Designed for automotive applications and AEC-Q101 qualified

• Low threshold voltage

• Low on-voltage drop

• High voltage clamping feature

• Logic level gate charge

• ESD gate-emitter protection

• Gate and gate-emitter integrated resistors

Application

• Automotive ignition