Ultra low on-resistance

Description Thesedevicesutilizethe7thgenerationofdesignrulesofST’sproprietarySTripFET™technology,withanewgatestructure.TheresultingPowerMOSFETexhibitsthelowestRDS(on)inallpackages. •Extremelylowgatecharge •Ultralowon-resistance •Lowgateinputresistance A

N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a DPAK package

Features •WorldwidebestRDS(on)xarea •WorldwidebestFOM(figureofmerit) •Ultralowgatecharge •100avalanchetested •Zener-protected Applications •Flybackconverter •Adaptersfortablets,notebookandAIO •LEDlighting

N-channel 800 V, 285 mΩ typ., 12 A MDmesh K6 Power MOSFET in a DPAK package

Features •WorldwidebestRDS(on)xarea •WorldwidebestFOM(figureofmerit) •Ultralowgatecharge •100avalanchetested •Zener-protected Applications •Flybackconverter •Adaptersfortablets,notebookandAIO •LEDlighting Description ThisveryhighvoltageN-channelPowe

N-channel 30 V, 4 mΩ typ., 80 A Power MOSFET in a DPAK package

Features Verylowon-resistance Verylowgatecharge Highavalancheruggedness Lowgatedrivepowerloss Applications Switchingapplications Description ThisdeviceisanN-channelPowerMOSFETwith verylowRDS(on)inallpackages.

N-channel 800 V, 380 mΩ typ., 10 A MDmesh K6 Power MOSFET in a DPAK package

Features •WorldwidebestRDS(on)xarea •WorldwidebestFOM(figureofmerit) •Ultralowgatecharge •100avalanchetested •Zener-protected Applications •Flybackconverter •Adaptersfortablets,notebookandAIO •LEDlighting Description ThisveryhighvoltageN-channelPowerMO

SCHOTTKY RECTIFIER

150'CTJoperation Centertapconfiguration Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability TrenchMO

SCHOTTKY RECTIFIER

Features 150'CTJoperation Centertapconfiguration Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability 

SCHOTTKY RECTIFIER

Features 150'CTJoperation Centertapconfiguration Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability 

Complementary transistor pair in a single package

Description TheSTD815CP40isahybridcomplementarypairofpowerbipolartransistorsmanufacturedbyusingthehighvoltagemulti-epitaxialplanartechnologyforhighswitchingspeedsandmediumvoltagecapability. TheSTD815CP40ishousedindualislandDIP-8packagewithseparatedterminals

SCHOTTKY RECTIFIER

Features 150'CTJoperation Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability TrenchMOSSchottkytechnolo

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA.TheSTD83003isexp

Complementary transistor pair in a single package

Features ■LowVCE(sat) ■Simplifiedcircuitdesign ■Reducedcomponentcount ■Lowspreadofdynamicparameters Applications ■Compactfluorescentlamp(CFL)110Vmains Description TheSTD830CP20isahybridcomplementarypair ofpowerbipolartransistorsmanufacturedby usingthe

Complementary transistor pair in a single package

Description TheSTD830CP40isahybridcomplementarypairofpowerbipolartransistorsmanufacturedbyusingthehighvoltagemulti-epitaxialplanartechnologyforhighswitchingspeedsandmediumvoltagecapability. TheSTD830CP40ishousedindualislandDIP-8packagewithseparatedterminals

N-channel 30 V, 0.0042 廓 , 80 A, DPAK, TO-220, IPAK STripFET??V Power MOSFET

Description Thisproductutilizesthe5thgenerationofdesignrulesofST’sproprietarySTripFETTMtechnology.ThelowestavailableRDS(on)*Qg,inthestandardpackages,makesthisdevicesuitableforthemostdemandingDC-DCconverterapplications,wherehighpowerdensityistobeachieved. F

SCHOTTKY RECTIFIER

Features 150'CTJoperation Centertapconfiguration Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability 

High current, high performance, low voltage NPN transistors

Description ThedevicesaremanufacturedinlowvoltageNPNplanartechnologywith“baseisland”layout.theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Verylowcollectortoemittersaturationvoltage ■DCcurrentgain,hFE

High current, high performance, low voltage NPN transistors

Description ThedevicesaremanufacturedinlowvoltageNPNplanartechnologywith“baseisland”layout.theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Verylowcollectortoemittersaturationvoltage ■DCcurrentgain,hFE

NPN Silicon Transistor

Description •Suitableforlowvoltagelargecurrentdrivers •ExcellenthFELinearity •ComplementarypairwithSTB772 •SwitchingApplication Features •LowcollectorsaturationvoltageVCE(sat)=0.4V(Max.)

NPN Silicon Transistor

Description •Suitableforlowvoltagelargecurrentdrivers •ExcellenthFELinearity •ComplementarypairwithSTB772D •SwitchingApplication Features •LowcollectorsaturationvoltageVCE(sat)=0.4V(Max.)

NPN Silicon Transistor

Description •Suitableforlowvoltagelargecurrentdrivers •ExcellenthFELinearity •ComplementarypairwithSTB772D •SwitchingApplication Features •Lowcollectorsaturationvoltage VCE(sat)=0.4V(Max.)

HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR

DESCRIPTION ThedeviceismanufacturedinlowvoltagePNPPlanarTechnologybyusingaBaseIslandlayout. TheresultingTransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. ■VERYLOWCOLLECTORTOEMITTERSATURATIONVOLTAGE ■DCCURRENTGAIN,hFE>100

HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR

DESCRIPTION TheUTCSTD888isahighcurrent,highperformance,lowvoltagePNPtransistor;itusesUTC’sadvancedtechnologytoprovidecustomershighDCcurrentgainandverylowsaturationvoltage. TheUTCSTD888issuitableforswitchingregulatorinbatterychargerapplications,heavyload

isc Silicon PNP Power Transistor

DESCRIPTION •LowCollector-EmitterSaturationVoltage-:VCE(sat)=-0.7V(Max)(IC=-5A;IB=-0.25A) •DCCurrentGain-hFE=150(Min)@IC=-0.5A •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Poweramplifierapplications •Voltageregulat

HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR

DESCRIPTION TheUTCSTD888isahighcurrent,highperformance,lowvoltagePNPtransistor;itusesUTC’sadvancedtechnologytoprovidecustomershighDCcurrentgainandverylowsaturationvoltage. TheUTCSTD888issuitableforswitchingregulatorinbatterychargerapplications,heavyload

HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR

DESCRIPTION TheUTCSTD888isahighcurrent,highperformance,lowvoltagePNPtransistor;itusesUTC’sadvancedtechnologytoprovidecustomershighDCcurrentgainandverylowsaturationvoltage. TheUTCSTD888issuitableforswitchingregulatorinbatterychargerapplications,heavyload

HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR

DESCRIPTION TheUTCSTD888isahighcurrent,highperformance,lowvoltagePNPtransistor;itusesUTC’sadvancedtechnologytoprovidecustomershighDCcurrentgainandverylowsaturationvoltage. TheUTCSTD888issuitableforswitchingregulatorinbatterychargerapplications,heavyload

HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR

DESCRIPTION TheUTCSTD888isahighcurrent,highperformance,lowvoltagePNPtransistor;itusesUTC’sadvancedtechnologytoprovidecustomershighDCcurrentgainandverylowsaturationvoltage. TheUTCSTD888issuitableforswitchingregulatorinbatterychargerapplications,heavyload

Medium Current, High Performance, Low Voltage PNP Transistor

DESCRIPTION ThedeviceismanufacturedinlowvoltagePNPPlanarTechnologybyusingaBaseIslandlayout. TheresultingTransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. ■VERYLOWCOLLECTORTOEMITTERSATURATIONVOLTAGE ■DCCURRENTGAIN,hFE>100

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.21Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTED CHARACTERIZATION ■TH

N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.25Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINPUTCAPACITANCE ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPEARTINGTEMPERATURE ■APPLICATION

N-channel 650 V, 0.56 廓, 7 A MDmesh??V Power MOSFET

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

N-channel 500 V, 0.73 廓 typ., 5 A MDmesh?줚I Power MOSFET in DPAK, TO-220 and IPAK packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab

N-channel 600 V - 0.56 廓 - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh??Power MOSFET

Description ThisseriesofdevicesimplementssecondgenerationMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemandingh

N-channel 600 V - 0.56 廓 - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh??Power MOSFET

Description ThisseriesofdevicesimplementssecondgenerationMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemandingh

N-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFET

Description TheFDmesh™IIseriesbelongstothesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutandassociatesalladvantagesofreducedonresistanceandfastswitchingwithanintrinsicfastrecoverybody

N-CHANNEL 250V - 0.38ohm - 8A DPAK MESH OVERLAY??MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersforli

STD

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Flexible MPEG audio/video codec with DVD and DVB receiver capability

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Flexible MPEG audio/video codec with DVD and DVB receiver capability

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Isc N-Channel MOSFET Transistor

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N-Channel 100-V (D-S) MOSFET

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N-channel 40 V, 5.5 m typ., 80 A STripFET VI DeepGATE Power MOSFET in DPAK

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N-Channel MOSFET uses advanced trench technology

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Automotive-grade N-channel 60 V, 4.4 m??typ., 80 A STripFET??VI DeepGATE??Power MOSFET in a DPAK package

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N-Channel MOSFET uses advanced SGT technology

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N-Channel 60 V (D-S) 175 째C MOSFET

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Ultralow forward voltage drop

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STD

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SCHOTTKY RECTIFIER

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SCHOTTKY RECTIFIER

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SCHOTTKY RECTIFIER

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STD

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PNP MEDIUM POWER TRANSISTOR

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PNP MEDIUM POWER TRANSISTOR

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封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：散装 描述：TRANS PNP 30V 3A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

STD

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封装/外壳：8-DIP（0.300"，7.62mm） 包装：卷带（TR） 描述：TRANS NPN/PNP 400V 3A 8DIP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列

STD

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Dual NPN high voltage transistors in a single package

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Dual NPN high voltage transistors in a single package

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