汽车级N沟道40 V、5.5 mOhm典型值、80 A STripFET F6功率MOSFET，DPAK封装

This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages. • Designed for automotive applications and AEC-Q101 qualified \n• Low gate charge \n• Very low on-resistance \n• High avalanche ruggedness;

N-channel 40 V, 5.5 m typ., 80 A STripFET VI DeepGATE Power MOSFET in DPAK

文件：1.43706 Mbytes Page：18 Pages

N-Channel MOSFET uses advanced trench technology

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) =6.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

High avalanche ruggedness

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N-channel 40 V, 5.5 m typ., 80 A STripFET VI DeepGATE Power MOSFET in DPAK

文件：1.43706 Mbytes Page：18 Pages