汽车级N沟道60 V、4.4 mOhm典型值、80 A STripFET(TM) VI DeepGATE(TM) 功率MOSFET，DPAK封装

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. • AEC-Q101 qualified \n• Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

丝印代码：80N6F6；Automotive-grade N-channel 60 V, 4.4 m??typ., 80 A STripFET??VI DeepGATE??Power MOSFET in a DPAK package

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N-Channel 60 V (D-S) 175 째C MOSFET

文件：998.79 Kbytes Page：8 Pages

N-Channel MOSFET uses advanced SGT technology

文件：1.08523 Mbytes Page：4 Pages

N-Channel Enhancement Mode MOSFET

Application » Adaptor « Charger « Power management o SMPS Standby Power

Automotive-grade N-channel 60 V, 4.4 m??typ., 80 A STripFET??VI DeepGATE??Power MOSFET in a TO-220 package

Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Features • Designed for automotive applications and AEC-Q101 quali

N-Channel MOSFET uses advanced trench technology

文件：973.99 Kbytes Page：4 Pages