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STD8NM60N价格

参考价格:¥7.8881

型号:STD8NM60ND 品牌:STMicroelectronics 备注:这里有STD8NM60N多少钱,2026年最近7天走势,今日出价,今日竞价,STD8NM60N批发/采购报价,STD8NM60N行情走势销售排行榜,STD8NM60N报价。
型号 功能描述 生产厂家 企业 LOGO 操作
STD8NM60N

N-channel 600 V - 0.56 廓 - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh??Power MOSFET

Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding h

STMICROELECTRONICS

意法半导体

STD8NM60N

N-channel 600 V, 0.56 廓,7 A MDmesh??II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK

文件:706.65 Kbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

STD8NM60N

N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh™ Power MOSFET

STMICROELECTRONICS

意法半导体

N-channel 600 V - 0.56 廓 - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh??Power MOSFET

Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding h

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFET

Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.56 廓,7 A MDmesh??II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK

文件:706.65 Kbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

丝印代码:DPAK;isc N-Channel MOSFET Transistor

文件:324.82 Kbytes Page:2 Pages

ISC

无锡固电

N-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFET

STMICROELECTRONICS

意法半导体

N-CHANNEL 650V Tjmax-0.9ohm-8A TO-220/FP/D/IPAK/D2PAK STripFET II MOSFET

Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adopt

STMICROELECTRONICS

意法半导体

N-CHANNEL 650V Tjmax-0.9ohm-8A TO-220/FP/D/IPAK/D2PAK STripFET II MOSFET

Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adopt

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.9ohm - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh??Power MOSFET

Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adopt

STMICROELECTRONICS

意法半导体

N-CHANNEL 650V Tjmax-0.9ohm-8A TO-220/FP/D/IPAK/D2PAK STripFET II MOSFET

Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adopt

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.9ohm - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh??Power MOSFET

Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adopt

STMICROELECTRONICS

意法半导体

STD8NM60N产品属性

  • 类型

    描述

  • 型号

    STD8NM60N

  • 功能描述

    MOSFET N-Channel 600V Pwr Mosfet

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-8-2 17:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
26+
TO-252-3
30000
房间原装现货特价热卖,有单详谈
ST专家
25+23+
DPAK
29579
绝对原装正品全新进口深圳现货
ST
25+
TO-252
4500
全新原装、诚信经营、公司现货销售!
STM
24+
TO-252
5000
全新原装正品,现货销售
25+
10
公司现货库存
ST
26+
原厂原封装
86720
代理授权原装正品价格最实惠 本公司承诺假一赔百
ST
24+
TO-252
7500
ST
24+
DPAK
3000
全新原装环保现货
ST/意法
2450+
TO252
6540
只做原厂原装正品终端客户免费申请样品
ST
21+
TO-252
1516
十年信誉,只做原装,有挂就有现货!

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