N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=8A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 600mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · PFC Circuits · AC and DC Motor Drives

N沟道600 V、550 mOhm典型值、8 A MDmesh DM2功率MOSFET，DPAK封装

N-channel 600 V, 550 m(ohm) typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package

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N-channel 600 V, 550 mΩ typ., 8 A MDmeshTM DM2 Power MOSFET in a TO-220FP package

Features  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100 avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode seri