丝印代码：80N240K6；N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a DPAK package

Features • Worldwide best RDS(on) x area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100 avalanche tested • Zener-protected Applications • Flyback converter • Adapters for tablets, notebook and AIO • LED lighting

N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a DPAK package

这种超高电压N沟道功率MOSFET基于意法半导体20年的超结技术经验，采用终极MDmesh K6技术设计而成。其结果为最佳单位面积导通电阻和栅极电荷，适用于需要出色的功率密度和高效率的应用。\n\n • 全球最佳RDS(on) x 面积 \n• 极低的栅极电荷 \n• 稳压保护;

丝印代码：80N240K6；N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a TO-220FP package

Features • Worldwide best RDS(on) x area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications • Flyback converter • Adapters for tablets, notebook and AIO • LED lighting Description This very high voltage N-channel

丝印代码：80N240K6；N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package

Features • Worldwide best RDS(on) x area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100 avalanche tested • Zener-protected Applications • Flyback converter • Adapters for tablets, notebook and AIO • LED lighting

丝印代码：80N240K6；N-channel 800 V, 197 m廓 typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package

文件：259.079 Kbytes Page：13 Pages