丝印代码：80N3LL；N-channel 30 V, 4 mΩ typ., 80 A Power MOSFET in a DPAK package

Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is an N-channel Power MOSFET with very low RDS(on) in all packages.

N沟道30 V、2 mOhm典型值、120 A STripFET H6功率MOSFET，DPAK封装

This device is an N-channel Power MOSFET with very low RDS(on) in all packages. • Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

Pigtailed PD for analog application

文件：250.67 Kbytes Page：4 Pages

Pigtailed PD for analog application

文件：250.67 Kbytes Page：4 Pages

Pigtailed PD for analog application

文件：250.67 Kbytes Page：4 Pages

Pigtailed PD for analog application

文件：250.67 Kbytes Page：4 Pages

Pigtailed PD for analog application

文件：250.67 Kbytes Page：4 Pages