N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.25 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPEARTING TEMPERATURE ■ APPLICATION

N-Channel 100 V (D-S) MOSFET

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N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

8 Amps,100 Volts N-CHANNEL Power MOSFET

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TMOS POWER FETs 8AMPERES

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TMOS POWER FETs 8AMPERES

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100V N-Channel MOSFET

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