Circuit Protection Solutions Low Voltage Fuse Links Catalogue

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N-Channel E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

N-Channel Logic Level E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

N-Channel Logic Level E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

N-channel 30 V, 0.0072 廓, 48 A - DPAK - IPAK STripFET??V Power MOSFET

Description This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Ver

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 48A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 8.4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 55V - 8.0m??- 65A - DPAK - IPAK MDmesh??low voltage Power MOSFET

Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packin

N-channel 55V - 8.0m??- 65A - DPAK - IPAK MDmesh??low voltage Power MOSFET

Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packin

N-CHANNEL 60V - 0.014ohm - 60A DPAK STripFET??II POWER MOSFET

Description This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer a

N-channel 60V - 0.014ohm - 60A - DPAK

Description This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer a

N-channel 60V - 0.014ohm - 60A - DPAK

Description This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer a

N-CHANNEL 30V - 0.0075ohm - 60A DPAK STripFET??II POWER MOSFET

Description This application specific Power MOSFET is the third genaration of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance ang gate charge. When used as high and low side in buck regulators, it gives

N-CHANNEL 55V - 0.012ohm - 60A DPAK STripFET??II POWER MOSFET

Description This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable

N-channel 55V - 0.012廓 - 60A - DPAK STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remark

N-channel 55V - 0.012廓 - 60A - DPAK STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remark

HIGH VOLTAGE NPN POWER TRANSISTOR

DESCRIPTION The STD616A is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability. ■ REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES ■ HIGH VOLTAGE CAPABILITY ■ HIGH DC CURRENT GAIN ■ THROUGH-HO

HIGH VOLTAGE NPN POWER TRANSISTOR

DESCRIPTION The STD616A is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability. ■ REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES ■ HIGH VOLTAGE CAPABILITY ■ HIGH DC CURRENT GAIN ■ THROUGH-HO

HIGH VOLTAGE NPN POWER TRANSISTOR

DESCRIPTION The STD616A is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability. ■ REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES ■ HIGH VOLTAGE CAPABILITY ■ HIGH DC CURRENT GAIN ■ THROUGH-HO

HIGH VOLTAGE NPN POWER TRANSISTOR

DESCRIPTION The STD616A is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability. ■ REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES ■ HIGH VOLTAGE CAPABILITY ■ HIGH DC CURRENT GAIN ■ THROUGH-HO

NPN Silicon Transistor

Features • Very low saturation voltage: VCE(sat)=0.2V (Max.) @ IC=50mA, IB=5mA • High DC current gain: hFE=1000~2500 • Small size SMD package Application • Micom Direct drive and switching Application

NPN Silicon Transistor

Features • Very low saturation voltage: VCE(sat)=0.2V (Max.) @ IC=50mA, IB=5mA • High DC current gain: hFE=1000~2500 • Small size SMD package Application • Micom Direct drive and switching Application

NPN Silicon Transistor

Application • Micom Direct drive and switching Application Features • Very low saturation voltage: VCE(sat)=0.2V (Max.) @ IC=50mA, IB=5mA • High DC current gain: hFE=1000~2500

NPN Silicon Transistor

Application • Micom Direct drive and switching Application Features • Very low saturation voltage: VCE(sat)=0.2V (Max.) @ IC=50mA, IB=5mA • High DC current gain: hFE=1000~2500

N-channel 650 V, 132 mΩ typ., 20 A MDmesh M9 Power MOSFET in a DPAK package

Description This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=65A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance -RDS(on) =6.9mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 55V - 8.0mΩ - 65A - DPAK MDmesh™ low voltage Power MOSFET

General features ■ Standard threshold drive ■ 100 avalanche tested Description This N-Channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufac

N-channel 55V - 8.0m ohm - 65A - DPAK STripFET TM Power MOSFET

Description This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. Features • AEC-Q101 qualified • 100 avalanche tested Applications • Switching applications

N-channel 55 V, 7.0, 80 A DPAK STripFET III Power MOSFET

Description This product is a N-channel enhancement mode Power MOSFET built with STripFET™ III technology which is especially tailored to minimized on-state resistance and gate charge, providing superior switching performance. Features ■ Low threshold drive ■ 100 avalanche tested Application

N-channel 60V - 11.5m廓 - 60A - DPAK/TO-220 STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.35 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUG

Zener-protected

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high ef

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS=950V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.25Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

N-CHANNEL 100V - 0.22 ohm - 6A IPAK/DPAK LOW GATE CHARGE STripFET??POWER MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for telecom a

N-channel 100 V, 0.22 廓, 6 A, DPAK, IPAK low gate charge STripFET??Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for telecom a

N-channel 100 V, 0.22 廓, 6 A, DPAK, IPAK low gate charge STripFET??Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for telecom a

N-channel 100 V, 0.22 廓, 6 A, DPAK, IPAK low gate charge STripFET??Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for telecom a

N-CHANNEL 500V - 0.93 ohm - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH MOSFET

■ TYPICAL RDS(on) = 0.93 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100 AVALANCHE TESTED ■ GATE CHARGE MINIMIZED ■ VERY LOW INTRINSIC CAPACITANCES ■ VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established st

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.6A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 500V - 0.93 ohm - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH MOSFET

■ TYPICAL RDS(on) = 0.93 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100 AVALANCHE TESTED ■ GATE CHARGE MINIMIZED ■ VERY LOW INTRINSIC CAPACITANCES ■ VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established st

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：474.69 Kbytes Page：4 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：1.91074 Mbytes Page：4 Pages

STD

文件：67.81 Kbytes Page：1 Pages

N-Channel 30-V (D-S) MOSFET

文件：996.87 Kbytes Page：7 Pages

N-Channel 30-V (D-S) MOSFET

文件：996.79 Kbytes Page：7 Pages

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：116.67 Kbytes Page：10 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：474.69 Kbytes Page：4 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：1.91074 Mbytes Page：4 Pages

Thyristor-Diode Modules

文件：241.74 Kbytes Page：4 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：474.69 Kbytes Page：4 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：1.91074 Mbytes Page：4 Pages

Thyristor-Diode Modules

文件：241.74 Kbytes Page：4 Pages