Description

This N-channel Power MOSFET is based on the most innovative super-junction

MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very

low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain

manufacturing process which allows an enhanced device structure. The resulting

product has one of the lower on-resistance and reduced gate charge values,

among all silicon based fast switching super-junction Power MOSFETs, making

it particularly suitable for applications that require superior power density and

outstanding efficiency.

Features

• Worldwide best FOM RDS(on)*Qg among silicon-based devices

• Higher VDSS rating

• Higher dv/dt capability

• Excellent switching performance

• Easy to drive

• 100 avalanche tested

• Zener-protected

Applications

• High efficiency switching applications