N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.35 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUG

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate DPAK for Surface Mount or Insertion Mount This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and realy drivers.

TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM

TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery t

POWER FIELD EFFECT TRANSISTOR

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use i

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies