N-channel 55V - 0.012廓 - 60A - DPAK STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remark

N-channel 55 V, 0.012 Ohm, 60 A DPAK STripFET(TM) II Power MOSFET

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and compu Low threshold drive;

N沟道55 V、12 mOhm、60 A STripFET II功率MOSFET，DPAK封装

This Power MOSFET series realized with STMicroelectronics unique STripFET™ process is specifically designed to minimize input capacitance and gate charge. It is therefore ideal as a primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer applications. It is also • AEC-Q101 qualified \n• Low threshold drive;

N-channel 55V - 0.012廓 - 60A - DPAK STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remark

N-Channel 60-V (D-S) MOSFET

Features ® Vos =60V.lo =50A Ros

N-CHANNEL 55V - 0.012ohm - 60A DPAK STripFET??II POWER MOSFET

Description This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable

N-channel 55V - 0.012廓 - 60A - DPAK/IPAK STripFET??II Power MOSFET

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