Thyristor-Diode Modules, Diode-Thyristor Modules

文件：474.69 Kbytes Page：4 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：1.91074 Mbytes Page：4 Pages

N-Channel E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

N-Channel Logic Level E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

N-Channel Logic Level E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

N-channel 30 V, 0.0072 廓, 48 A - DPAK - IPAK STripFET??V Power MOSFET

Description This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Ver

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 48A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 8.4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 55V - 8.0m??- 65A - DPAK - IPAK MDmesh??low voltage Power MOSFET

Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packin

N-channel 55V - 8.0m??- 65A - DPAK - IPAK MDmesh??low voltage Power MOSFET

Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packin

N-CHANNEL 60V - 0.014ohm - 60A DPAK STripFET??II POWER MOSFET

Description This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer a

N-channel 60V - 0.014ohm - 60A - DPAK

Description This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer a

N-channel 60V - 0.014ohm - 60A - DPAK

Description This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer a

N-CHANNEL 30V - 0.0075ohm - 60A DPAK STripFET??II POWER MOSFET

Description This application specific Power MOSFET is the third genaration of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance ang gate charge. When used as high and low side in buck regulators, it gives

N-CHANNEL 55V - 0.012ohm - 60A DPAK STripFET??II POWER MOSFET

Description This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable

N-channel 55V - 0.012廓 - 60A - DPAK STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remark

N-channel 55V - 0.012廓 - 60A - DPAK STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remark

STD

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N-Channel 30-V (D-S) MOSFET

文件：996.87 Kbytes Page：7 Pages

N-Channel 30-V (D-S) MOSFET

文件：996.79 Kbytes Page：7 Pages

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：116.67 Kbytes Page：10 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：474.69 Kbytes Page：4 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：1.91074 Mbytes Page：4 Pages

Thyristor-Diode Modules

文件：241.74 Kbytes Page：4 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：474.69 Kbytes Page：4 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：1.91074 Mbytes Page：4 Pages

Thyristor-Diode Modules

文件：241.74 Kbytes Page：4 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：474.69 Kbytes Page：4 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：1.91074 Mbytes Page：4 Pages

Thyristor-Diode Modules

文件：241.74 Kbytes Page：4 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：474.69 Kbytes Page：4 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：1.91074 Mbytes Page：4 Pages

Thyristor-Diode Modules

文件：241.74 Kbytes Page：4 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：1.91074 Mbytes Page：4 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：474.69 Kbytes Page：4 Pages

Thyristor-Diode Modules

文件：241.74 Kbytes Page：4 Pages

Thyristor-Diode Modules

文件：241.74 Kbytes Page：4 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.01976 Mbytes Page：8 Pages

N-channel 30 V, 0.0072 廓, 48 A DPAK, IPAK, TO-220 STripFET??V Power MOSFET

文件：391.92 Kbytes Page：16 Pages

N-channel 30 V, 0.0072 廓, 48 A DPAK, IPAK, TO-220 STripFET??V Power MOSFET

文件：391.92 Kbytes Page：16 Pages

N-channel 55 V, 6.5 m廓, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET??III Power MOSFET

文件：630.35 Kbytes Page：20 Pages

N-Channel 60 V (D-S) 175 째C MOSFET

文件：999.05 Kbytes Page：8 Pages

N-Channel MOSFET uses advanced trench technology

文件：2.23493 Mbytes Page：5 Pages

N-Channel 60 V (D-S) MOSFET

文件：989.67 Kbytes Page：7 Pages

N-channel 60V - 0.014ohm - 60A - DPAK STripFET II Power MOSFET

文件：413.77 Kbytes Page：13 Pages

N-channel 30V - 0.0075廓 - 60A - DPAK STripFET??II Power MOSFET

文件：404.94 Kbytes Page：13 Pages

N-channel 30V - 0.0075廓 - 60A - DPAK STripFET??II Power MOSFET

文件：404.94 Kbytes Page：13 Pages

N-channel 30V - 0.0075廓 - 60A - DPAK STripFET??II Power MOSFET

文件：404.94 Kbytes Page：13 Pages

N-Channel 30-V (D-S) MOSFET

文件：992.41 Kbytes Page：8 Pages

N-channel 55V - 0.012廓 - 60A - DPAK/IPAK STripFET??II Power MOSFET

文件：430.19 Kbytes Page：14 Pages

N-channel 55V - 0.012廓 - 60A - DPAK/IPAK STripFET??II Power MOSFET

文件：430.19 Kbytes Page：14 Pages

N-channel 55V - 0.012廓 - 60A - DPAK/IPAK STripFET??II Power MOSFET

文件：430.19 Kbytes Page：14 Pages

N-Channel 60 V (D-S) MOSFET

文件：979.11 Kbytes Page：7 Pages

N-channel 55V - 0.012廓 - 60A - DPAK/IPAK STripFET??II Power MOSFET

文件：430.19 Kbytes Page：14 Pages

N-CHANNEL 30V - 0.0075 W - 60A DPAK/IPAK STripFET III POWER MOSFET

文件：534.83 Kbytes Page：12 Pages

N-channel 30V - 0.0075ohm - 60A - DPAK/IPAK STripFET TM III Power MOSFET

文件：503.16 Kbytes Page：16 Pages

N-channel 30V - 0.0075ohm - 60A - DPAK/IPAK STripFET TM III Power MOSFET

文件：503.16 Kbytes Page：16 Pages

N-CHANNEL 30V - 0.0075 W - 60A DPAK/IPAK STripFET III POWER MOSFET

文件：534.83 Kbytes Page：12 Pages

N-channel 30V - 0.0075ohm - 60A - DPAK/IPAK STripFET TM III Power MOSFET

文件：503.16 Kbytes Page：16 Pages

N-CHANNEL 30V - 0.0075 W - 60A DPAK/IPAK STripFET III POWER MOSFET

文件：534.83 Kbytes Page：12 Pages

N-channel 30V - 0.0075ohm - 60A - DPAK/IPAK STripFET TM III Power MOSFET

文件：503.16 Kbytes Page：16 Pages