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STD20价格
参考价格:¥37.8378
型号:STD20 品牌:Cooper Bussmann 备注:这里有STD20多少钱,2024年最近7天走势,今日出价,今日竞价,STD20批发/采购报价,STD20行情走势销售排行榜,STD20报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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STD20 | Circuit Protection Solutions Low Voltage Fuse Links Catalogue 文件:4.91849 Mbytes Page:55 Pages | COOPER 科普斯株洲市科普斯科技有限公司 | ||
SCHOTTKY RECTIFIER Features 150'CTJoperation Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability TrenchMOSSchottkytechnolo | SMCDIODESMC Diode Solutions 桑德斯微电子器件(南京)有限公司 | |||
SCHOTTKY RECTIFIER Features 150'CTJoperation Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability TrenchMOSSchottkytechnolo | SMCDIODESMC Diode Solutions 桑德斯微电子器件(南京)有限公司 | |||
SCHOTTKY RECTIFIER Features 150'CTJoperation Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation TrenchMOSSchottkytechnology Terminalsfinish:100PureTin ThisisaPb−FreeDevi | SMCDIODESMC Diode Solutions 桑德斯微电子器件(南京)有限公司 | |||
SCHOTTKY RECTIFIER Features 150'CTJoperation Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability TrenchMOSSchottkytechnolo | SMCDIODESMC Diode Solutions 桑德斯微电子器件(南京)有限公司 | |||
SCHOTTKY RECTIFIER Features 150'CTJoperation Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability TrenchMOSSchottkytechnolo | SMCDIODESMC Diode Solutions 桑德斯微电子器件(南京)有限公司 | |||
P-Channel E nhancement Mode F ield Effect Transistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package. | Samhop 三合微科 | |||
P-Channel E nhancement Mode MOSFET FEATURES TO-252andTO-251Package. SuperhighdensecelldesignforlowRDS(ON). Ruggedandreliable. | Samhop 三合微科 | |||
SCHOTTKY RECTIFIER Features 150'CTJoperation Centertapconfiguration Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability | SMCDIODESMC Diode Solutions 桑德斯微电子器件(南京)有限公司 | |||
SCHOTTKY RECTIFIER Features 150'CTJoperation Centertapconfiguration Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability | SMCDIODESMC Diode Solutions 桑德斯微电子器件(南京)有限公司 | |||
SCHOTTKY RECTIFIER Features 150CTJoperation Centertapconfiguration Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability | SMCDIODESMC Diode Solutions 桑德斯微电子器件(南京)有限公司 | |||
N-Channel Logic Level E nhancement Mode F ield E ffect Transistor FEATURES •SuperhighdensecelldesignforlowRDS(ON). •Ruggedandreliable. •TO-252andTO-251Package. | Samhop 三合微科 | |||
N - CHANNEL ENHANCEMENT MODE ?쓀LTRA HIGH DENSITY??POWER MOS TRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthelatestdevelopmentinlowvoltagetechnology.Theultrahighcelldensityprocess(UHD)producedwithfinegeometriesonadvancedequipmentgivesthedeviceextremelylowRDS(on)aswellasgoodswitchingperformanceandhighavalancheene | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL 200V - 0.10 OHM - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFET II MOSFET DESCRIPTION ThisMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhigh-efficiencyisolatedDC-DCconverters. GeneralFeatures ■TYPICALRDS( | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL 200V - 0.10 OHM - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFET II MOSFET DESCRIPTION ThisMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhigh-efficiencyisolatedDC-DCconverters. GeneralFeatures ■TYPICALRDS( | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N - CHANNEL ENHANCEMENT MODE ??SINGLE FEATURE SIZE ??POWER MOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkable | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N - CHANNEL ENHANCEMENT MODE ??SINGLE FEATURE SIZE ??POWER MOSFET DESCRIPTION ThisMOSFETisthelatestdevelopmentofSTMicroelectronicsuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkablema | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel 60V - 0.032OHM - 24A - DPAK - IPAK STripFET II Power MOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize™”stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=24A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=40mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
60V N-Channel Enhancement ModePowerMOSFET GeneralDescription TheSTD20NF06Lusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),25mΩ(Typ)@VGS=10V RDS(ON),30mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnolo | UMWUMW 友台友台半导体 | |||
N-channel 60V - 0.032OHM - 24A - DPAK - IPAK STripFET II Power MOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize™”stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Automotive-grade N-channel 60 V, 32 mΩ typ., 24 A, STripFET II Power MOSFET in a DPAK package Features •AEC-Q101qualified •Exceptionaldv/dtcapability •100avalanchetested •Lowgatecharge Applications •Switchingapplications Description ThisPowerMOSFEThasbeendevelopedusingSTMicroelectronics'unique STripFETprocess,whichisspecificallydesignedtominimizein | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel 60V - 0.032廓 - 24A - DPAK - IPAK STripFET??II Power MOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize™”stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL 100V - 0.038 ohm - 25A IPAK/DPAK LOW GATE CHARGE STripFET??II POWER MOSFET Description ThisMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhighefficiency,high-frequencyisolatedDC-DCconvertersforTelecomandCom | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel 200V - 0.10廓 -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET??Power MOSFET Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFET™processhasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconverters. Features ■Excep | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件:276.5 Kbytes Page:4 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
This axial leaded strap product is designed to provide reliable, non-cycling protection for rechanrgeable batteries 文件:128.85 Kbytes Page:2 Pages | LittelfuseLittelfuse Inc. 力特力特公司 | |||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件:276.5 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Single-Chip Worldwide iDTV Processor 文件:262.47 Kbytes Page:11 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
STD 文件:67.81 Kbytes Page:1 Pages | VCC Visual Communications Company | |||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件:276.5 Kbytes Page:4 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件:276.5 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules 文件:238.58 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件:276.5 Kbytes Page:4 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件:276.5 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules 文件:238.58 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件:276.5 Kbytes Page:4 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件:276.5 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules 文件:238.58 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件:276.5 Kbytes Page:4 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件:276.5 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules 文件:238.58 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件:276.5 Kbytes Page:4 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件:276.5 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules 文件:238.58 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules 文件:238.58 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
SCHOTTKY RECTIFIER 文件:168.92 Kbytes Page:8 Pages | SMCSintered Metal Company 烧结金属烧结金属公司 | |||
SCHOTTKY RECTIFIER 文件:203.16 Kbytes Page:8 Pages | SMCSintered Metal Company 烧结金属烧结金属公司 | |||
High frequency operation 文件:208.43 Kbytes Page:5 Pages | SMCSintered Metal Company 烧结金属烧结金属公司 | |||
封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 150V DPAK 分立半导体产品 二极管 - 整流器 - 单 | SMCDIODESMC Diode Solutions 桑德斯微电子器件(南京)有限公司 | |||
SCHOTTKY RECTIFIER 文件:159.39 Kbytes Page:7 Pages | SMCSintered Metal Company 烧结金属烧结金属公司 | |||
SCHOTTKY RECTIFIER 文件:189.72 Kbytes Page:7 Pages | SMCSintered Metal Company 烧结金属烧结金属公司 | |||
封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE ARRAY SCHOTTKY 45V DPAK 分立半导体产品 二极管 - 整流器 - 阵列 | SMCDIODESMC Diode Solutions 桑德斯微电子器件(南京)有限公司 | |||
N-Channel 60-V (D-S) MOSFET 文件:899 Kbytes Page:6 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-CHANNEL 60V - 0.032OHM - 24A DPAK STripFET TM II POWER MOSFET 文件:342.91 Kbytes Page:13 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-Channel MOSFET uses advanced trench technology 文件:2.38019 Mbytes Page:5 Pages | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | |||
N-Channel 60 V (D-S) MOSFET 文件:963.83 Kbytes Page:7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-Channel 60-V (D-S) MOSFET 文件:899.01 Kbytes Page:6 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-CHANNEL 60V - 0.032OHM - 24A DPAK STripFET TM II POWER MOSFET 文件:342.91 Kbytes Page:13 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-Channel 60-V (D-S) MOSFET 文件:898.99 Kbytes Page:6 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 |
STD20产品属性
- 类型
描述
- 型号
STD20
- 功能描述
保险丝 20A 240VAC IND
- RoHS
否
- 制造商
Littelfuse
- 产品
Surface Mount Fuses
- 电流额定值
0.5 A
- 电压额定值
600 V
- 保险丝类型
Fast Acting
- 保险丝大小/组
Nano
- 尺寸
12.1 mm L x 4.5 mm W
- 端接类型
SMD/SMT
- 系列
485
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
STMicroelectronics |
24+ |
DPAK |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
STM |
23+ |
TO-252-3 (DPAK) |
20000 |
原装现货支持送检 |
|||
ST(意法半导体) |
22+ |
DPAK |
10000 |
只做原装现货 假一赔万 |
|||
ON/安森美 |
23+ |
TO252 |
16316 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ST |
N/A |
2500 |
有挂就有正品原装 |
||||
ST |
23+ |
T0252-3 |
30000 |
全新原装现货特价销售,欢迎来电查询 |
|||
ST |
23+ |
TO252 |
90000 |
原装现货实单必成 |
|||
ST/意法 |
21+ |
TO251 |
9852 |
只做原装正品假一赔十!正规渠道订货! |
|||
ST/意法 |
20+ |
TO-252 |
3000 |
支持实单/原盒/原包/原标/进口原装 |
|||
STMicroelectronics Asia Pacifi |
23+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
STD20规格书下载地址
STD20参数引脚图相关
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- STD200
- STD1NK80ZT4
- STD1NK80Z-1
- STD1NK60T4
- STD1NK60-1
- STD1HN60K3
- STD18NF25
- STD18NF03L
- STD18N65M5
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- STD1862
- STD181
- STD180BLK
- STD1805
- STD1802T4-A
- STD1802T4
- STD1802
- STD18
- STD17YZ
- STD17YY
- STD17YX
- STD17YW
- STD17YV
- STD17YU
- STD17YT
- STD17YS
- STD17YR
- STD17YQ
- STD17YP
- STD17YO
- STD17YN
- STD17YM
- STD17YL
- STD17W-8
- STD17W-6
- STD17W-4
- STD17NF25
- STD17NF03LT4
- STD17NF03L-1
- STD16NF25
- STD16NF06T4
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