Circuit Protection Solutions Low Voltage Fuse Links Catalogue

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SCHOTTKY RECTIFIER

Features  150'C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technolo

SCHOTTKY RECTIFIER

Features  150'C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technolo

SCHOTTKY RECTIFIER

Features  150'C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Trench MOS Schottky technology  Terminals finish: 100 Pure Tin  This is a Pb − Free Devi

SCHOTTKY RECTIFIER

Features  150'C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technolo

SCHOTTKY RECTIFIER

Features  150'C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technolo

SCHOTTKY RECTIFIER

Features  150'C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technolo

SCHOTTKY RECTIFIER

 150 C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technology  Thi

P-Channel E nhancement Mode F ield Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

P-Channel E nhancement Mode MOSFET

FEATURES TO-252 and TO-251 Package. Super high dense cell design for low RDS(ON). Rugged and reliable.

SCHOTTKY RECTIFIER

Features  150'C TJ operation  Center tap configuration  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability 

SCHOTTKY RECTIFIER

Features  150 'C TJ operation  Center tap configuration  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability 

SCHOTTKY RECTIFIER

Features  150 C TJ operation  Center tap configuration  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability 

N-Channel Logic Level E nhancement Mode F ield E ffect Transistor

FEATURES • Super high dense cell design for low RDS(ON). • Rugged and reliable. • TO-252 and TO-251 Package.

N - CHANNEL ENHANCEMENT MODE ?쓀LTRA HIGH DENSITY??POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the latest development in low voltage technology. The ultra high cell density process (UHD) produced with fine geometries on advanced equipment gives the device extremely low RDS(on) as well as good switching performance and high avalanche ene

N-CHANNEL 200V - 0.10 OHM - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFET II MOSFET

DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. General Features ■ TYPICAL RDS(

N-CHANNEL 200V - 0.10 OHM - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFET II MOSFET

DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. General Features ■ TYPICAL RDS(

N - CHANNEL ENHANCEMENT MODE ??SINGLE FEATURE SIZE ??POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable

N - CHANNEL ENHANCEMENT MODE ??SINGLE FEATURE SIZE ??POWER MOSFET

DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable ma

N-channel 60V - 0.032OHM - 24A - DPAK - IPAK STripFET II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 24A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

60V N-Channel Enhancement ModePowerMOSFET

General Description The STD20NF06L uses advanced trench technology and design to provide excellent RDS(ON) with low gate cha rge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),25mΩ(Typ) @ VGS =10V RDS(ON),30mΩ(Typ) @ VGS =4.5V Advanced Trench Technolo

60V N-Channel Enhancement Mode Power MOSFET

General Description The STD20NF06L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),25mΩ(Typ) @ VGS =10V RDS(ON),30mΩ(Typ) @ VGS =4.5V Advanced Trench Technol

N-channel 60V - 0.032OHM - 24A - DPAK - IPAK STripFET II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

Automotive-grade N-channel 60 V, 32 mΩ typ., 24 A, STripFET II Power MOSFET in a DPAK package

Features • AEC-Q101 qualified • Exceptional dv/dt capability • 100 avalanche tested • Low gate charge Applications • Switching applications Description This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize in

N-channel 60V - 0.032廓 - 24A - DPAK - IPAK STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

N-CHANNEL 100V - 0.038 ohm - 25A IPAK/DPAK LOW GATE CHARGE STripFET??II POWER MOSFET

Description This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Com

N-channel 200V - 0.10廓 -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET??Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters. Features ■ Excep

Thyristor-Diode Modules, Diode-Thyristor Modules

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This axial leaded strap product is designed to provide reliable, non-cycling protection for rechanrgeable batteries

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Thyristor-Diode Modules, Diode-Thyristor Modules

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Single-Chip Worldwide iDTV Processor

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STD

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Thyristor-Diode Modules, Diode-Thyristor Modules

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Thyristor-Diode Modules, Diode-Thyristor Modules

文件：276.5 Kbytes Page：4 Pages

Thyristor-Diode Modules

文件：238.58 Kbytes Page：4 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：276.5 Kbytes Page：4 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：276.5 Kbytes Page：4 Pages

Thyristor-Diode Modules

文件：238.58 Kbytes Page：4 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：276.5 Kbytes Page：4 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：276.5 Kbytes Page：4 Pages

Thyristor-Diode Modules

文件：238.58 Kbytes Page：4 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：276.5 Kbytes Page：4 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：276.5 Kbytes Page：4 Pages

Thyristor-Diode Modules

文件：238.58 Kbytes Page：4 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：276.5 Kbytes Page：4 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：276.5 Kbytes Page：4 Pages

Thyristor-Diode Modules

文件：238.58 Kbytes Page：4 Pages

Thyristor-Diode Modules

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SCHOTTKY RECTIFIER

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SCHOTTKY RECTIFIER

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High frequency operation

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封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 150V DPAK 分立半导体产品 二极管 - 整流器 - 单

SCHOTTKY RECTIFIER

文件：159.39 Kbytes Page：7 Pages

SCHOTTKY RECTIFIER

文件：189.72 Kbytes Page：7 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 45V DPAK 分立半导体产品 二极管 - 整流器 - 阵列

N-Channel 60-V (D-S) MOSFET

文件：899 Kbytes Page：6 Pages

N-CHANNEL 60V - 0.032OHM - 24A DPAK STripFET TM II POWER MOSFET

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N-Channel MOSFET uses advanced trench technology

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N-Channel 60 V (D-S) MOSFET

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