P-Channel E nhancement Mode F ield Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

P-Channel E nhancement Mode F ield Effect Transistor

DECT 500 mW power amplifier

GENERAL DESCRIPTION The CGY2030M is a GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply. When power control is not required, it can be operated without negative supply voltage. FEATURES • Power Amplifier (PA) overall eff

Integrated Circuit High Voltage Segment Driver for Gas Discharge Tubes

Description: The NTE2030 is capable of driving 8 segments of a high voltage display tube with a constant output sink current, which can be adjusted by external program resistor, Rp. The program current is half that of output “ON” current. In the “OFF” state the outputs can tolerate more than 80

SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 20.0 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • For

ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 20.0 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • For

SCHOTTKY BARRIER RECTIFIERS(20A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara