SCHOTTKY RECTIFIER

Features  150'C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technolo

超低正向肖特基二极管

SCHOTTKY RECTIFIER

 150 C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technology  Thi

SWITCHMODE Schottky Power Rectifier

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s

Fast Recovery Rectifier

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20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers

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Noninductive Planar Low Cost, 20 Watt TO 220 Package Thick Film Resistor

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Noninductive Planar Low Cost, 20 Watt TO 220 Package Thick Film Resistor

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