位置：首页 > IC中文资料第111页 > STD20NE06
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STD20NE06 | N - CHANNEL ENHANCEMENT MODE ??SINGLE FEATURE SIZE ??POWER MOSFET DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable ma | STMICROELECTRONICS 意法半导体 |   | |
STD20NE06 | N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET | STMICROELECTRONICS 意法半导体 | | |
N - CHANNEL 60V - 0.06ohm - 20A D2PAK STripFET] POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of STMicroelectronis unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remark | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 60V - 0.06ohm - 20A TO-263 STripFET] POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of STMicroelectronis unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remark | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 60V - 0.06 ohm - 20A TO-220/TO-220FP STripFET POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ” Single Feature Size ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a rem | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.31336 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | |
STD20NE06产品属性
- 类型
描述
- 型号
STD20NE06
- 功能描述
MOSFET RO 511-STD20NF06 511BCY79IX
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
440 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST/意法 |
24+ |
TO252 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
24+ |
N/A |
7150 |
|||||
ST |
17+ |
TO-252 |
6200 |
||||
ST |
25+ |
TO-220 |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
|||
ST |
NEW |
TO-252 |
8795 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ST |
2447 |
SOT252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ST |
22+ |
SOT252 |
20000 |
公司只做原装 品质保障 |
|||
ST |
01+ |
TO-252 |
440 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
TO-252 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
STD20NE06规格书下载地址
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