位置：首页 > IC中文资料第111页 > STD20NE06
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STD20NE06 | N - CHANNEL ENHANCEMENT MODE ??SINGLE FEATURE SIZE ??POWER MOSFET DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable ma | STMICROELECTRONICS 意法半导体 |   | |
STD20NE06 | N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET | STMICROELECTRONICS 意法半导体 | | |
N - CHANNEL 60V - 0.06ohm - 20A D2PAK STripFET] POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of STMicroelectronis unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remark | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 60V - 0.06ohm - 20A TO-263 STripFET] POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of STMicroelectronis unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remark | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 60V - 0.06 ohm - 20A TO-220/TO-220FP STripFET POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ” Single Feature Size ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a rem | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.31336 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | |
STD20NE06产品属性
- 类型
描述
- 型号
STD20NE06
- 功能描述
MOSFET RO 511-STD20NF06 511BCY79IX
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
20+ |
TO-252 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
ST/意法 |
23+ |
TO-252 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
ST |
12+ |
TO-252 |
15000 |
全新原装,绝对正品,公司现货供应。 |
|||
ST/意法 |
24+ |
TO-252 |
440 |
只做原厂渠道 可追溯货源 |
|||
ADI |
23+ |
TO-252 |
8000 |
只做原装现货 |
|||
ST |
2447 |
SOT252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ST/意法 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
ST |
05+ |
TO-252 |
8000 |
原装进口 |
|||
ST/意法 |
24+ |
TO252 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
ST |
24+ |
TO-252 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
STD20NE06规格书下载地址
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