位置：首页 > IC中文资料第589页 > SPD30N03S
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel MOSFET Transistor • DESCRITION • Superior thermal resistance • FEATURES • Static drain-source on-resistance: RDS(on)≤10mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 |   | ||
OptiMOSa Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | ||
OptiMOSa Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
OptiMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
OptiMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
OptiMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
OptiMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated 文件：658.42 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated 文件：658.42 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated 文件：658.42 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature N-Channel Enhancement mode 文件：637.45 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature N-Channel Enhancement mode 文件：637.45 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level 文件：687.74 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level 文件：687.74 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level 文件：687.74 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level | Infineon 英飞凌 | | ||
MOSFET N-CH 30V 30A TO252-3 | Infineon 英飞凌 | | ||
30V N-Channel Power Features VDS = 30V,ID =90A RDS(ON),3.9 mΩ(Typ) @ VGS =10V RDS(ON), 6.5mΩ(Typ) @ VGS =4.5V Low on resistance Low gate charge Fast switching Low reverse transfer capacitances | UMW 友台半导体 | | ||
30V N-Channel Power General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 30V,ID =90A RDS(ON),3.9 mΩ(Typ) @ VGS =10V RDS(ON), 6.5mΩ(Typ) @ VGS =4.5V Low on | EVVOSEMI 翊欧 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.01839 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
30A竊?0V N-CHANNEL MOSFET 文件：235.42 Kbytes Page：5 Pages | KIA 可易亚半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.0152 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | |
SPD30N03S产品属性
- 类型
描述
- 型号
SPD30N03S
- 功能描述
MOSFET N-CH 30V 30A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
2500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INFINEON/英飞凌 |
25+ |
TO252 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
INFINEON/英飞凌 |
25+ |
PBF |
880000 |
明嘉莱只做原装正品现货 |
|||
infineon |
24+ |
TO-252 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
INFINEON/英飞凌 |
2406+ |
PBF |
71260 |
诚信经营!进口原装!量大价优! |
|||
Infineon(英飞凌) |
24+ |
- |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON |
22+ |
P-TO252-3-11 |
17788 |
原装现货库存.价格优势 |
|||
INFINEON/英飞凌 |
23+ |
TO-252 |
24190 |
原装正品代理渠道价格优势 |
|||
INFINEON |
25+ |
TO-2632L(D2PAK) |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
|||
INF |
23+ |
TO-252 |
10000 |
原装正品,假一罚十 |
SPD30N03S规格书下载地址
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2019-6-18
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