型号 功能描述 生产厂家 企业 LOGO 操作
SPD30N03S2L-10G

OptiMOS Power-Transistor

Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant

Infineon

英飞凌

SPD30N03S2L-10G

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

VBSEMI

微碧半导体

OptiMOS Power-Transistor

Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant

Infineon

英飞凌

OptiMOS Power-Transistor Feature N-Channel Enhancement mode

文件:637.45 Kbytes Page:9 Pages

Infineon

英飞凌

OptiMOS Power-Transistor

文件:157.54 Kbytes Page:8 Pages

Infineon

英飞凌

N-Channel 30-V (D-S) MOSFET

文件:1.89539 Mbytes Page:8 Pages

VBSEMI

微碧半导体

SPD30N03S2L-10G产品属性

  • 类型

    描述

  • 型号

    SPD30N03S2L-10G

  • 制造商

    Infineon Technologies AG

更新时间:2025-9-26 15:35:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INF
23+
TO-252
10000
原装正品,假一罚十
INFINEON
TO-252
6877
正品原装--自家现货-实单可谈
INFINEON/英飞凌
2450+
TO-252
8850
只做原装正品假一赔十为客户做到零风险!!
INF
24+
TO-252-2
9860
全新原装现货/假一罚百!
INFINEON/英飞凌
23+
TO-252
50000
全新原装正品现货,支持订货
Infineon
2025+
TO-252-2
5425
全新原厂原装产品、公司现货销售
INFINE0N
新年份
TO-252
33288
原装正品现货,实单带TP来谈!
infineon
25+
TO-252
14288
INFINE0N
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
INFINEON
25+23+
TO-252
43300
绝对原装正品全新进口深圳现货

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