丝印代码：30N03A；30V N-Channel Power

Features VDS = 30V,ID =90A RDS(ON),3.9 mΩ(Typ) @ VGS =10V RDS(ON), 6.5mΩ(Typ) @ VGS =4.5V Low on resistance Low gate charge Fast switching Low reverse transfer capacitances

丝印代码：30N03A；30V N-Channel Power

General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 30V,ID =90A RDS(ON),3.9 mΩ(Typ) @ VGS =10V RDS(ON), 6.5mΩ(Typ) @ VGS =4.5V Low on

场效应管

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature

SIPMOS Power Transistor

文件：560.56 Kbytes Page：14 Pages

SIPMOS Power Transistor

文件：560.56 Kbytes Page：14 Pages