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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPD30N03S2L | N-Channel MOSFET Transistor • DESCRITION • Superior thermal resistance • FEATURES • Static drain-source on-resistance: RDS(on)≤10mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 |   | |
OptiMOSa Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | ||
OptiMOSa Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
OptiMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
OptiMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
OptiMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
OptiMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated 文件：658.42 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated 文件：658.42 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated 文件：658.42 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
MOSFET N-CH 30V 30A TO252-3 | Infineon 英飞凌 | | ||
MOSFET N-CH 30V 30A DPAK | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature N-Channel Enhancement mode 文件：637.45 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature N-Channel Enhancement mode 文件：637.45 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level 文件：687.74 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level 文件：687.74 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level 文件：687.74 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRITION • Superior thermal resistance • FEATURES • Static drain-source on-resistance: RDS(on)≤10mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
Isc N-Channel MOSFET Transistor 文件：321.15 Kbytes Page：2 Pages | ISC 无锡固电 | |
SPD30N03S2L产品属性
- 类型
描述
- 型号
SPD30N03S2L
- 功能描述
MOSFET N-CH 30V 30A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
33250 |
原厂直销,现货供应,账期支持! |
|||
INFINEON/英飞凌 |
25+ |
PBF |
880000 |
明嘉莱只做原装正品现货 |
|||
Infineon(英飞凌) |
24+ |
TO-252 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON/英飞凌 |
24+ |
TO-252 |
10000 |
只做原厂渠道 可追溯货源 |
|||
INFINEON |
24+ |
TO-252 |
1450 |
||||
INFINEON/英飞凌 |
24+ |
TO-252 |
60000 |
||||
INFINEON/英飞凌 |
24+ |
TO-252 |
27950 |
郑重承诺只做原装进口现货 |
|||
INFINEON/英飞凌 |
2406+ |
PBF |
71260 |
诚信经营!进口原装!量大价优! |
|||
INFINE0N |
21+ |
DPAK (TO-252) |
32568 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
|||
INFIENION |
06+ |
原厂原装 |
2481 |
只做全新原装真实现货供应 |
SPD30N03S2L芯片相关品牌
SPD30N03S2L规格书下载地址
SPD30N03S2L参数引脚图相关
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SPD30N03S2L数据表相关新闻
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属性 参数值 商品目录 压接端子 触头材料 磷青铜 触头镀层 锡 线规 - AWG 24~30 镀层厚度 - 线规 - mm2 0.05~0.22 产品类型 压线端子 认证 RoHS
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2019-6-18
DdatasheetPDF页码索引
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