General Description

These N-channel enhancement mode power mosfets used

advanced trench technology design, provided excellent Rdson

and low gate charge. Which accords with the RoHS standard.

Features

VDS = 30V,ID =90A

RDS(ON),3.9 mΩ(Typ) @ VGS =10V

RDS(ON), 6.5mΩ(Typ) @ VGS =4.5V

Low on resistance

Low gate charge

Fast switching

Low reverse transfer capacitances

Application

DC-DC converters

Synchronous Rectifier