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SPA11N60C价格
参考价格：￥9.1510
型号：SPA11N60C3 品牌：Infineon Technologies 备注：这里有SPA11N60C多少钱，2025年最近7天走势，今日出价，今日竞价，SPA11N60C批发/采购报价，SPA11N60C行情走势销售排行榜，SPA11N60C报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Cool MOS??Power Transistor Feature 1. New revolutionary high voltage technology 2. Ultra low gate charge 3. Periodic avalanche rated 4. Extreme dv/dt rated 5. Ultra low effective capacitances | Infineon 英飞凌 |   | ||
Cool MOS??Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) | Infineon 英飞凌 | | ||
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) | Infineon 英飞凌 | | ||
isc N-Channel MOSFET Transistor • FEATURES • New revolutionary high voltage technology • Ultra low gate charge • High peak current capability • Improved transconductance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications | ISC 无锡固电 | | ||
N-Channel 650V (D-S)Power MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) | VBSEMI 微碧半导体 | | ||
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Ultra low gate charge • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.38Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perfor | ISC 无锡固电 | | ||
Isc N-Channel MOSFET Transistor • FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applica | ISC 无锡固电 | | ||
CoolMOS Power Transistor Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Periodic avalanche rated • Qualified according to JEDEC0) for target application | Infineon 英飞凌 | | ||
Cool MOS™ Power Transistor | Infineon 英飞凌 | | ||
500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | | ||
Cool MOS??Power Transistor Feature New revolutionary high voltage technology 文件：659.64 Kbytes Page：16 Pages | Infineon 英飞凌 | | ||
Cool MOS??Power Transistor 文件：662.11 Kbytes Page：15 Pages | Infineon 英飞凌 | | ||
Cool MOS??Power Transistor Feature New revolutionary high voltage technology 文件：659.64 Kbytes Page：16 Pages | Infineon 英飞凌 | | ||
CoolMOSTM Power Transistor Features New revolutionary high voltage technology 文件：210.02 Kbytes Page：12 Pages | Infineon 英飞凌 | | ||
CoolMOS Power Transistor 文件：560.84 Kbytes Page：12 Pages | Infineon 英飞凌 | | ||
500 V-950 V CoolMOS™ N 沟道功率 MOSFET | Infineon 英飞凌 | | ||
CoolMOSTM Power Transistor Features New revolutionary high voltage technology 文件：210.02 Kbytes Page：12 Pages | Infineon 英飞凌 | | ||
CoolMOS Power Transistor 文件：560.84 Kbytes Page：12 Pages | Infineon 英飞凌 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.85356 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.03276 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.94216 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL DEPLETION-MODE POWER MOSFET 文件：220.51 Kbytes Page：6 Pages | UTC 友顺 | | ||
isc N-Channel MOSFET Transistor 文件：297.95 Kbytes Page：2 Pages | ISC 无锡固电 | |
SPA11N60C产品属性
- 类型
描述
- 型号
SPA11N60C
- 制造商
INFINEON
- 制造商全称
Infineon Technologies AG
- 功能描述
Cool MOS⑩ Power Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
24+ |
TO-220F(TO-220IS) |
25000 |
原装正品,假一赔十! |
|||
INFINEON/英飞凌 |
24+ |
NA/ |
50000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INFINEON |
NEW |
TO-220F |
7936 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
INFINEON |
25+23+ |
TO-220F |
27734 |
绝对原装正品全新进口深圳现货 |
|||
INFINEON/英飞凌 |
2450+ |
PG-TO220-3 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
Infineon/英飞凌 |
21+ |
TO-220F(TO-220IS) |
6820 |
只做原装,质量保证 |
|||
INFINEON |
24+ |
TO-220属封 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
INFINEON/英飞凌 |
2406+ |
TO-220 |
11260 |
诚信经营!进口原装!量大价优! |
|||
Infineon(英飞凌) |
24+ |
TO-220F |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON |
24+ |
TO-220属封 |
5000 |
全新原装正品,现货销售 |
SPA11N60C规格书下载地址
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SPA11N60C数据表相关新闻
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SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
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特点 •新的革命高电压技术 •内在的快速恢复体二极管 •极低的反向恢复电荷 •超低栅极电荷 •至尊的dv/ dt的额定 •高峰值电流能力 •定期雪崩额定 •合格的为工业级应用根据JEDEC0） •无铅引脚电镀，符合RoHS标准
2012-11-10
DdatasheetPDF页码索引
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