CoolMOS Power Transistor

Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Periodic avalanche rated • Qualified according to JEDEC0) for target application

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applica

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation.\n Replacement for • Fourth series of CoolMOS™ market entry in 2004\n• Fast Body Diode, Qrr 1/10th of C3 series, Vth 4 V, g fs high, Rg low\n• Specific for phase-shift ZVS and DC-AC power applications\n\n优势:\n• Improved efficiency\n• More efficient, more compact, lighter and cooler\n• Outstanding reliability with prov;

CoolMOSTM Power Transistor Features New revolutionary high voltage technology

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CoolMOS Power Transistor

文件：560.84 Kbytes Page：12 Pages

CoolMOSTM Power Transistor Features New revolutionary high voltage technology

文件：210.02 Kbytes Page：12 Pages

CoolMOS Power Transistor

文件：560.84 Kbytes Page：12 Pages

SHORT CIRCUIT RATED LOW ON-VOLTAGE

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

SHORT CIRCUIT RATED LOW ON-VOLTAGE

Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge • Pb-free lead plating; RoHS compliant • Qualified accordi