位置：首页 > IC中文资料第5692页 > SPA11N60C2
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPA11N60C2 | Cool MOS??Power Transistor Feature 1. New revolutionary high voltage technology 2. Ultra low gate charge 3. Periodic avalanche rated 4. Extreme dv/dt rated 5. Ultra low effective capacitances | Infineon 英飞凌 |   | |
Cool MOS??Power Transistor Feature 1. New revolutionary high voltage technology 2. Ultra low gate charge 3. Periodic avalanche rated 4. Extreme dv/dt rated 5. Ultra low effective capacitances | Infineon 英飞凌 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.85385 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.8644 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.86869 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | |
SPA11N60C2产品属性
- 类型
描述
- 型号
SPA11N60C2
- 制造商
INFINEON
- 制造商全称
Infineon Technologies AG
- 功能描述
Cool MOS⑩ Power Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
2016+ |
TO220F |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
|||
三年内 |
1983 |
只做原装正品 |
|||||
INFINEON |
24+ |
TO-220F |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
INFINEON |
23+ |
TO-220F |
7936 |
||||
INFINEON/英飞凌 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
INFINEON/英飞凌 |
21+ |
TO-220F |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
INFINEON |
23+ |
TO-220F |
5000 |
专做原装正品,假一罚百! |
|||
INFINEON |
20+ |
TO-220F |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
Infineon |
17+ |
TO-220F |
6200 |
||||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
SPA11N60C2芯片相关品牌
SPA11N60C2规格书下载地址
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SPA11N60C2数据表相关新闻
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https://hch01.114ic.com/
2020-11-13SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
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SPB17N80C3 BSZ520N15NS3 G 电信 ，供电系统
2019-8-6SPA07N60C3
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2019-4-24SPA20N60CFD-CoolMOS功率晶体管
特点 •新的革命高电压技术 •内在的快速恢复体二极管 •极低的反向恢复电荷 •超低栅极电荷 •至尊的dv/ dt的额定 •高峰值电流能力 •定期雪崩额定 •合格的为工业级应用根据JEDEC0） •无铅引脚电镀，符合RoHS标准
2012-11-10
DdatasheetPDF页码索引
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