SPA11N60C3价格

参考价格:¥9.1510

型号:SPA11N60C3 品牌:Infineon Technologies 备注:这里有SPA11N60C3多少钱,2024年最近7天走势,今日出价,今日竞价,SPA11N60C3批发/采购报价,SPA11N60C3行情走势销售排行榜,SPA11N60C3报价。
型号 功能描述 生产厂家&企业 LOGO 操作
SPA11N60C3

iscN-ChannelMOSFETTransistor

•FEATURES •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
SPA11N60C3

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
SPA11N60C3

N-Channel650V(D-S)PowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS)

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI
SPA11N60C3

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

文件:659.64 Kbytes Page:16 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
SPA11N60C3

CoolMOS??PowerTransistor

文件:662.11 Kbytes Page:15 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perfor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

文件:659.64 Kbytes Page:16 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

N-ChannelMOSFETTransistor

•DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perform

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤380mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-Channel650V(D-S)MOSFET

文件:1.84713 Mbytes Page:8 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

SPA11N60C3产品属性

  • 类型

    描述

  • 型号

    SPA11N60C3

  • 功能描述

    MOSFET COOL MOS N-CH 600V 11A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-4-25 10:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFIN
1436+
N
30000
绝对原装进口现货可开增值税发票
INFINEON
17+
TO-220F
6200
100%原装正品现货
Infineon
18+
TO-220F
2756
进口原装优势供应QQ3171516190
三年内
1983
纳立只做原装正品13590203865
23+
TO-220F
280000
专注原装正品现货特价中量大可定
INFINEO
2021+
原厂原封装
93628
原装进口现货 假一罚百
INFINEON
22+
TO-220F
13568
实力现货,随便验!
INFINEON/英飞凌
2021+
TO-220F
18198
原装进口假一罚十
Infineon
10+
SG
6000
绝对原装自己现货
INFINE0N
23+
TO-220-3
11846
一级代理商现货批发,原装正品,假一罚十

SPA11N60C3芯片相关品牌

  • ABRACON
  • AD
  • HAMMOND
  • ICST
  • MOLEX7
  • Motorola
  • NIC
  • Sipex
  • STMICROELECTRONICS
  • SUNMATE
  • Temic
  • TRACOPOWER

SPA11N60C3数据表相关新闻