N-Channel 650 V (D-S) MOSFET

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丝印代码：11N60C2；Cool MOS??Power Transistor

Feature 1. New revolutionary high voltage technology 2. Ultra low gate charge 3. Periodic avalanche rated 4. Extreme dv/dt rated 5. Ultra low effective capacitances

丝印代码：11N60C3；Cool MOS™ Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

丝印代码：11N60C3；Cool MOS™ Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

丝印代码：11N60C2；Cool MOS??Power Transistor

Feature 1. New revolutionary high voltage technology 2. Ultra low gate charge 3. Periodic avalanche rated 4. Extreme dv/dt rated 5. Ultra low effective capacitances

丝印代码：11N60C3；Cool MOS™ Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

丝印代码：11N60C2；Cool MOS??Power Transistor

Feature 1. New revolutionary high voltage technology 2. Ultra low gate charge 3. Periodic avalanche rated 4. Extreme dv/dt rated 5. Ultra low effective capacitances

丝印代码：11N60C3；Cool MOS™ Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

丝印代码：11N60M6；N-channel 600 V, 500 mΩ typ., 8 A, MDmesh M6 Power MOSFET in a DPAK package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications • LLC converters • Boost PFC converters Description The new MDmesh M6 technology incorp

丝印代码：11N60M2EP；N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh™ M2 EP Power MOSFET in an I²PAKFP package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhan

丝印代码：11N60M2E；N-channel 600 V, 0.600 Ω typ., 5.5 A MDmesh™ M2 EP Power MOSFET in a PowerFLAT™ 5x6 HV package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhan

丝印代码：11N60C3；Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：659.64 Kbytes Page：16 Pages

丝印代码：11N60C3；Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：659.64 Kbytes Page：16 Pages

丝印代码：11N60C3；Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：659.64 Kbytes Page：16 Pages

丝印代码：11N60C3；Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：659.64 Kbytes Page：16 Pages

Cool MOS™ Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

Cool MOS™ Power Transistor

Cool MOS™ Power TransistorFeature\n• New revolutionary high voltage technology\n• Ultra low gate charge\n• Periodic avalanche rated\n• Extreme dv/dt rated\n• High peak current capability\n• Improved transconductance\n• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)\n• Pb-free lea

11A, 600V N-CHANNEL POWER MOSFET

The UTC 11N60K-MT is an N-channel enhancement modepower MOSFET. It uses UTC advanced planar stripe, DMOStechnology to provide customers perfect switching performance,minimal on-state resistance. It also can withstand high energy pulsein the avalanche and commutation mode.The UTC 11N60K-MT is univers • RDS(ON)<1.00Ω @ VGS=10V\n• Fast Switching\n• With 100% Avalanche Tested;

Cool MOS™ Power Transistor

Cool MOS™ Power TransistorFeature\n• New revolutionary high voltage technology\n• Ultra low gate charge\n• Periodic avalanche rated\n• Extreme dv/dt rated\n• Ultra low effective capacitances\n• Improved transconductance

Cool MOS??Power Transistor

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

N-Channel 650 V (D-S) MOSFET

文件：1.85385 Mbytes Page：8 Pages

丝印代码：D2PAK；N-Channel 650 V (D-S) MOSFET

文件：1.8644 Mbytes Page：8 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.8644 Mbytes Page：8 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.84713 Mbytes Page：8 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.03276 Mbytes Page：8 Pages

N-Channel 650V (D-S) Power MOSFET

文件：1.94216 Mbytes Page：9 Pages

N-CHANNEL DEPLETION-MODE POWER MOSFET

文件：220.51 Kbytes Page：6 Pages

N-CHANNEL DEPLETION-MODE POWER MOSFET

文件：220.51 Kbytes Page：6 Pages

N-CHANNEL DEPLETION-MODE POWER MOSFET

文件：220.51 Kbytes Page：6 Pages

丝印代码：D2PAK；N-Channel 650 V (D-S) MOSFET

文件：1.03944 Mbytes Page：8 Pages

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

SHORT CIRCUIT RATED LOW ON-VOLTAGE

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

SHORT CIRCUIT RATED LOW ON-VOLTAGE

Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge • Pb-free lead plating; RoHS compliant • Qualified accordi