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型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
RJP60D0DPM | SiliconNChannelIGBTHighSpeedPowerSwitching SiliconNChannelIGBTHighSpeedPowerSwitching Features Shortcircuitwithstandtime(5styp.) Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(IC=22A,VGE=15V,Ta=25°C) Gatetoemittervoltagerating30V Pb-freeleadplatingan | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | ||
封装/外壳:TO-220-3 整包 包装:管件 描述:IGBT 600V 45A 40W TO-3PFM 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
SiliconNChannelIGBTHighSpeedPowerSwitching SiliconNChannelIGBTHighSpeedPowerSwitching Features Shortcircuitwithstandtime(5styp.) Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(IC=22A,VGE=15V,Ta=25°C) Gatetoemittervoltagerating30V Pb-freeleadplatingand | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
SiliconNChannelIGBTHighSpeedPowerSwitching SiliconNChannelIGBTHighSpeedPowerSwitching Features Shortcircuitwithstandtime(5styp.) Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(IC=22A,VGE=15V,Ta=25°C) Gatetoemittervoltagerating30V Pb-freeleadplatingan | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
SiliconNChannelIGBTApplication:Inverter Features •Shortcircuitwithstandtime(5μstyp.) •Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(atIC=22A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiode(100nstyp.)inonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf= | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
IGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.2V@IC=22A ·HighCurrentCapability ·HighInputImpedance APPLICATIONS ·SynchronousRectificationinSMPS ·AutomotiveChargers ·UPS,PFC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNChannelIGBTApplication:Inverter Features •Shortcircuitwithstandtime(5μstyp.) •Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(atIC=22A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiode(100nstyp.)inonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf= | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 |
RJP60D0DPM产品属性
- 类型
描述
- 型号
RJP60D0DPM
- 制造商
Renesas Electronics Corporation
- 功能描述
POWER MODULE - LEAD FREE - Rail/Tube
- 制造商
Renesas Electronics Corporation
- 功能描述
IGBT 600V 45A 40W TO-3PFM
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
瑞萨 |
24+ |
TO220F |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
RENESAS/瑞萨 |
23+ |
TO-TO-220F |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
RENESAS/瑞萨 |
22+ |
TO-3P |
25000 |
只做原装进口现货,专注配单 |
|||
RENESAS/瑞萨 |
23+ |
TO-3PFM |
10000 |
公司只做原装正品 |
|||
RENESAS/瑞萨 |
22+ |
TO-3P |
6000 |
十年配单,只做原装 |
|||
24+ |
N/A |
65000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
RENESAS |
24+ |
TO-3P |
35400 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
RENESAS/瑞萨 |
23+ |
TO-3P |
6000 |
原装正品,支持实单 |
|||
RENESAS |
1809+ |
TO-220 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
RJP60D0DPM规格书下载地址
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2019-3-7
DdatasheetPDF页码索引
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