型号 功能描述 生产厂家 企业 LOGO 操作
NTP60N06

60 V, 60 A, N-Channel TO-220 and D2PAK

文件:85.67 Kbytes Page:10 Pages

ONSEMI

安森美半导体

NTP60N06

N-Channel 60-V (D-S) MOSFET

文件:979.99 Kbytes Page:7 Pages

VBSEMI

微碧半导体

NTP60N06

功率 MOSFET,60V,60A,14mΩ,单 N 沟道,TO-220

ONSEMI

安森美半导体

N-Channel 60-V (D-S) MOSFET

文件:979.24 Kbytes Page:7 Pages

VBSEMI

微碧半导体

MOSFET N-CH 60V 60A TO220AB

ONSEMI

安森美半导体

60 V, 60 A, N-Channel TO-220 and D2PAK

文件:85.67 Kbytes Page:10 Pages

ONSEMI

安森美半导体

Power MOSFET 60 Amps, 60 Volts, Logic Level N?묬hannel TO??20 and D2PAK

文件:94.01 Kbytes Page:8 Pages

ONSEMI

安森美半导体

功率 MOSFET,60V,60A,14mΩ,单 N 沟道,TO-220,逻辑电平

ONSEMI

安森美半导体

Power MOSFET 60 Amps, 60 Volts, Logic Level N?묬hannel TO??20 and D2PAK

文件:94.01 Kbytes Page:8 Pages

ONSEMI

安森美半导体

TMOS POWER FET 60 AMPERES 60 VOLTS

HDTMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components wit

MOTOROLA

摩托罗拉

TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM

This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies

MOTOROLA

摩托罗拉

TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM

This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies

MOTOROLA

摩托罗拉

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP60N06LT is su

PHILIPS

飞利浦

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

PHILIPS

飞利浦

NTP60N06产品属性

  • 类型

    描述

  • 型号

    NTP60N06

  • 功能描述

    MOSFET 60V 60A N-Channel

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-3-15 8:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ONSEMICONDU
24+
原厂封装
9000
原装现货假一罚十
ON
2023+
TO-220
8800
正品渠道现货 终端可提供BOM表配单。
ON/安森美
22+
TO-2203LEADSTANDA
95306
onsemi
25+
TO-220
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
onsemi
25+
TO-220
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
ON
24+
TO-220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
ON
25+23+
TO220
73094
绝对原装正品现货,全新深圳原装进口现货
ON
23+
TO-220
5500
现货,全新原装
ON
23+
TO-220
5
正规渠道,只有原装!
VBsemi
24+
TO-220
9000
只做原装正品 有挂有货 假一赔十

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