TMOS POWER FET 60 AMPERES 60 VOLTS

HDTMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components wit

TMOS POWER FET 60 AMPERES 60 VOLTS

HDTMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components wit

N -Channel Enhancement Mode Power MOSFET

Features • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package

N -Channel Enhancement Mode Power MOSFET

Features • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package

N?묬hannel Power MOSFET

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N−Channel Power MOSFET

N-Channel 60-V (D-S) MOSFET

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N?묬hannel Power MOSFET

文件：284.62 Kbytes Page：11 Pages

MOSFET

MOSFET

N-Channel Enhancement Mode Power MOSFET

Description The 60N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

60 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) ≤ 18mΩ @ VGS=10V, ID=30A * Ultra low gate charge ( ty

60A, 60V N-CHANNEL POWER MOSFET

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N-Channel 60-V (D-S) MOSFET

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isc N-Channel MOSFET Transistor

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