TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM

This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies

N-Channel 60-V (D-S) MOSFET

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N?묬hannel Power MOSFET

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N-Channel Enhancement Mode Power MOSFET

Description The 60N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

60 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) ≤ 18mΩ @ VGS=10V, ID=30A * Ultra low gate charge ( ty

60A, 60V N-CHANNEL POWER MOSFET

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isc N-Channel MOSFET Transistor

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N-Channel 60-V (D-S) MOSFET

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