P-channel Enhancement Mode Power MOSFET

Features VDS= -30V, ID= -5.1A RDS(ON)

Power MOSFET 30V 3.05A 85 mOhm Single P-Channel SO-8

Power MOSFET -3.05 Amps, -30 Volts

文件：148.34 Kbytes Page：7 Pages

Power MOSFET -3.05 Amps, -30 Volts

文件：148.34 Kbytes Page：7 Pages

Power MOSFET -3.05 Amps, -30 Volts

文件：148.34 Kbytes Page：7 Pages

Power MOSFET -3.05 Amps, -30 Volts

P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐30V RDSON (MAX.) 125mΩ ID ‐3.1A Pb‐Free Lead Plating & Halogen Free

DUAL TMOS POWER MOSFET 30 VOLTS

Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistors Dual HDTMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. Dual HDTMOS devices are designed for use in low voltage, high speed switching applications where p

DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES

Plastic Power Transistors SO–8 for Surface Mount Applications • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 140 (Min) @ IC = 1.2 Adc = 125 (Min) @ IC = 3.0 Adc • Low Collector –Emitter Saturation Voltage — VCE(sat)

Plastic Power Transistors

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P?묬hannel Power MOSFET

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