P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐30V RDSON (MAX.) 125mΩ ID ‐3.1A Pb‐Free Lead Plating & Halogen Free

Power MOSFETs-P Channel

DUAL TMOS POWER MOSFET 30 VOLTS

Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistors Dual HDTMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. Dual HDTMOS devices are designed for use in low voltage, high speed switching applications where p

DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES

Plastic Power Transistors SO–8 for Surface Mount Applications • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 140 (Min) @ IC = 1.2 Adc = 125 (Min) @ IC = 3.0 Adc • Low Collector –Emitter Saturation Voltage — VCE(sat)

SINGLE TMOS POWER FET 3.0 AMPERES 30 VOLTS

Medium Power Surface Mount Products TMOS P-Channel Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance.

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current ID= 35A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max) ·100 Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed sw

Plastic Power Transistors

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