MOSFET – Power, Dual N-Channel, SOIC-8 40 V, 5.8 A

Features • Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life − RDS(on) = 0.027 , VGS = 10 V (Typ) − RDS(on) = 0.034 , VGS = 4.5 V (Typ) • Miniature SOIC−8 Surface Mount Package Saves Board Spac

功率 MOSFET，40V，4.6A，34mΩ，双 N 沟道，SO-8

MOSFET – Power, Dual N-Channel, SOIC-8 40 V, 5.8 A

Features • Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life − RDS(on) = 0.027 , VGS = 10 V (Typ) − RDS(on) = 0.034 , VGS = 4.5 V (Typ) • Miniature SOIC−8 Surface Mount Package Saves Board Spac

Power MOSFET

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Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8

文件：84.29 Kbytes Page：5 Pages

Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8

Power MOSFET

文件：105.45 Kbytes Page：5 Pages

Power MOSFET

文件：105.45 Kbytes Page：5 Pages

Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8

文件：84.29 Kbytes Page：5 Pages

Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：1.08883 Mbytes Page：9 Pages

MOSFET – Power, Dual N-Channel, SOIC-8 40 V, 5.8 A

Features • Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life − RDS(on) = 0.027 , VGS = 10 V (Typ) − RDS(on) = 0.034 , VGS = 4.5 V (Typ) • Miniature SOIC−8 Surface Mount Package Saves Board Spac

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

High Speed Switch Applications • With built-in gate-source resistor: RGS = 1 MΩ (typ.) • 2.5 V gate drive • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package

High Speed Switch Applications

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