Silicon NPN Transistor Low Noise Audio Amplifier

Features: ● VCEO = 120V (Min) ● Low Noise: = 1dB (Typ), 10dB (Max)

Bi-Polar transistor Selector Guide

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2500 Typ @ IC = 4A • Collector–Emitter Su

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2500 Typ @ IC = 4A • Collector–Emitter Su

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2500 Typ (NTE263) = 3500 T

Integrated Circuit Quad Differential Line Driver

Functional Description: The NTE2631 is a quad differential line driver constructed using Advanced Low–Power Schottky processing in a 16–Lead DIP type package designed for digital data transmission over balanced lines. This device meets all the requirements of EIA standard RS–422 and federal sta

Integrated Circuit Quad Differential Line Receiver

Functional Description: The NTE2632 is a quad line receiver constructed using Advanced Low–Power Schottky processing in a 16–Lead DIP type package designed to meet the requirements of RS–422 and RS–423, and federal standards 1020 and 1030 for balanced and unbalanced digital data transmission. T

Silicon Complementary Transistors High Frequency Video Driver

Description: The NTE2633 (NPN) and NTE2634 (PNP) are silicon complementary epitaxial transistor in a TO126 type package designed for use in the buffer stage of the driver for high–resolution color graphics monitors. Features: • High Breakdown Voltage • Low Output Capacitance

Silicon Complementary Transistors High Frequency Video Driver

Description: The NTE2633 (NPN) and NTE2634 (PNP) are silicon complementary epitaxial transistor in a TO126 type package designed for use in the buffer stage of the driver for high–resolution color graphics monitors. Features: • High Breakdown Voltage • Low Output Capacitance

Silicon NPN Transistor Horizontal Deflection w/Internal Damper Diode

Description: The NTE2635 is an enhanced performance, new generation, high–voltage, high–speed switching NPN transistor with an integrated damper diode in a full–pack envelope intended for use in horizontal deflection circuits in color TV receivers. This device features exceptional tolerance to

Silicon NPN Transistor Horizontal Deflection w/Internal Damper Diode

Features: • High Breakdown Voltage: VCES = 1500V • Built–In Damper Diode • Isolated TO3PFM Type Package Applications: • TV/Character Display Horizontal Deflection Output

Silicon NPN Transistor CRT Horizontal Deflection, High Voltage, Fast Switching

Features: • High Breakdown Voltage Capability • Fully Insulated Package for Easy Mounting • Low Saturation Voltage • High Switching Speed Applications: • Horizontal Deflection Stage in Standard and High Resolution Displays for TVs and Monitors • Switching Power Supply for TV

Silicon NPN Transistor Darlington

Features: • High Voltage, High Forward and Clamped Reverse Energy • 10A Peak Collector Current • 80W at +25°C Case Temperature • Collector–Emitter Sustaining Voltage: 400V Min at 7A

Silicon NPN Transistor CRT Horizontal Deflection, High Voltage, High Speed Switch

Description: The NTE2639 is a high voltage, high speed switching silicon NPN transistor in a plastgic full–pack envelope designed for use in horizontal deflection circuits of color TV receivers.

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2500 Typ (NTE263) = 3500 T

Silicon NPN Transistor Color TV Horizontal Deflection Output

Features: • High Speed • High Collector–Emitter Breakdown Voltage • High Reliability • On–Chip Damper Diode

Silicon NPN Transistor Horizontal Deflection Output for High Resolution Displays & Color TVs

Features: • High Voltage: VCBO = 1500V • Low Saturation Voltage: VCE(sat) = 3V Max • High Speed: tf = 0.1µs Typ

Silicon NPN Transistor Horizontal Deflection Output High Speed Switch

Features: • High Breakdown Voltage • High Reliability • High Speed Switching • Wide Area of Safe Operation (ASO)

Silicon NPN Transistor, VHF/UHF Low Noise Amp (Surface Mount)

Features: • Low Noise Figure, High Gain • NF = 1.1dB, |S21e|² = 13dB (f = 1GHz)

Silicon NPN Transistor General Purpose Amplifier, Switch Surface Mount

Features: • Low Current • Low Voltage Applications: • General Purpose Switching and Amplification

NTE2649 (NPN) & NTE2650 (PNP) Silicon Complementary Transistors Darlington

NTE2649 (NPN) NTE2650 (PNP) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . .

Silicon NPN Transistor Darlington Power Amplifier

Features: • Forward Current Transfer Ratio: hFE = 10,000 Min • Power Dissipation: 1.33W Free–Air @ TA = +50°C • Hard Solder Mountdown Applications: • Driver, IC Driver • Regulator • Touch Switch • Audio Output • Relay Substitute • Oscillator • Servo–Amplifier

NTE2649 (NPN) & NTE2650 (PNP) Silicon Complementary Transistors Darlington

NTE2649 (NPN) NTE2650 (PNP) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . .

Silicon NPN Transistor Horizontal Deflection Output for Ultrahigh−Definition CRT Display

Features: • High Speed • High Breakdown Voltage • High Reliability

Silicon NPN Transistor Darlington Power Amplifier

Features: • Forward Current Transfer Ratio: hFE = 40,000 Min • Power Dissipation: 1.33W Free–Air @ TA = +50°C • Hard Solder Mountdown Applications: • Driver, IC Driver • Regulator • Touch Switch • Audio Output • Relay Substitute • Oscillator • Servo–Amplifier

Silicon NPN Transistor Horizontal Deflection Output for HDTV

Features: • High Speed: tf = 0.15µs Typ • High Breakdown Voltage: VCBO = 1700V • Low Saturation Voltage: VCE(sat) = 3V Max

Silicon NPN Transistor High Frequency, Low Noise RF

Description: The NTE2662 is a silicon NPN type transistor in a miniature surface mount package designed for os cillator applications up to 3GHz. This device features low voltage operation, low phase noise, and high immunity to pushing effects. Features: • New Miniature Surface Mount Pac

Silicon NPN Transistor Horizontal Deflection Output for High Resolution Display, Color TV

Features: • High Voltage: VCBO = 1700V • Low Saturation Voltage: VCE(sat) = 3V Max • High Speed: tf = 0.1μs Typ

Silicon NPN Transistor High Current Switching

Features: • Adoption of FBET, MBIT process • Large Current Capacitance • Low Collector-To-Emitter Saturation Voltage • High Speed Switching • High Allowable Power Dissipation Applications: • DC-DC Converter • Relay Drivers • Lamp Drivers • Motor Drivers • Strobes

Silicon NPN Transistor High Gain Darlington Power Amp, Switch

Features: • Forward Current Transfer Ratio: hFE = 90,000 min. • Free–Air Power Dissipation: 1.33W @ TA = +50°C • Hard Solder Mountdown Applications: • Driver • Regulator • Audio Output • Relay Substitute • Touch Switch • Oscillator • IC Driver • Servo Amplifie

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential require ment, low power lamp and relay drivers and power drivers for high–current applications s

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential require ment, low power lamp and relay drivers and power drivers for high–current applications s

Complementary Transistors

Integrated Circuit Quad Differential Line Driver

Silicon Complementary Transistors General Purpose Amp

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Silicon Complementary Transistors General Purpose Amp

文件：60.82 Kbytes Page：2 Pages