Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential require ment, low power lamp and relay drivers and power drivers for high–current applications s

Complementary Transistors

Description:\nThe NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential require ment, low power lamp and relay drivers and power drivers for high–current applications such

Silicon Mesa Rectifiers

FEATURES • Glass passivated junction • Hermetically sealed package • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High voltage fast rectification diode

LC SOT-23 LED, Diffused Low Current LED

Features ● colored, diffused package ● extrem wide-angle LED ● for use as optical indicator ● high luminous intensity at very low currents (typ. 2 mA) ● suitable for all SMT assembly and soldering methods ● available taped on reel (8 mm tape)

LC SOT-23 LED, Diffused Low Current LED

Features ● colored, diffused package ● extrem wide-angle LED ● for use as optical indicator ● high luminous intensity at very low currents (typ. 2 mA) ● suitable for all SMT assembly and soldering methods ● available taped on reel (8 mm tape)

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE