Silicon NPN Transistor Darlington Power Amplifier

Features: • Forward Current Transfer Ratio: hFE = 10,000 Min • Power Dissipation: 1.33W Free–Air @ TA = +50°C • Hard Solder Mountdown Applications: • Driver, IC Driver • Regulator • Touch Switch • Audio Output • Relay Substitute • Oscillator • Servo–Amplifier

Bi-Polar transistor Selector Guide

NTE2649 (NPN) & NTE2650 (PNP) Silicon Complementary Transistors Darlington

NTE2649 (NPN) NTE2650 (PNP) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . .

Silicon NPN Transistor Horizontal Deflection Output for Ultrahigh−Definition CRT Display

Features: • High Speed • High Breakdown Voltage • High Reliability

Bi-Polar transistor Selector Guide

Complementary Transistors

GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays

Features ● GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process ● High reliability ● Same package as BPX 80 series Applications ● Miniature photointerrupters ● Punched tape-readers ● Industrial electronics ● For control and drive circuits

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

Square Type

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Micropower Programmable Quad Comparator

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