Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2500 Typ (NTE263) = 3500 T

Integrated Circuit Quad Differential Line Driver

Functional Description: The NTE2631 is a quad differential line driver constructed using Advanced Low–Power Schottky processing in a 16–Lead DIP type package designed for digital data transmission over balanced lines. This device meets all the requirements of EIA standard RS–422 and federal sta

Integrated Circuit Quad Differential Line Receiver

Functional Description: The NTE2632 is a quad line receiver constructed using Advanced Low–Power Schottky processing in a 16–Lead DIP type package designed to meet the requirements of RS–422 and RS–423, and federal standards 1020 and 1030 for balanced and unbalanced digital data transmission. T

Silicon Complementary Transistors High Frequency Video Driver

Description: The NTE2633 (NPN) and NTE2634 (PNP) are silicon complementary epitaxial transistor in a TO126 type package designed for use in the buffer stage of the driver for high–resolution color graphics monitors. Features: • High Breakdown Voltage • Low Output Capacitance

Silicon Complementary Transistors High Frequency Video Driver

Description: The NTE2633 (NPN) and NTE2634 (PNP) are silicon complementary epitaxial transistor in a TO126 type package designed for use in the buffer stage of the driver for high–resolution color graphics monitors. Features: • High Breakdown Voltage • Low Output Capacitance

Silicon NPN Transistor Horizontal Deflection w/Internal Damper Diode

Description: The NTE2635 is an enhanced performance, new generation, high–voltage, high–speed switching NPN transistor with an integrated damper diode in a full–pack envelope intended for use in horizontal deflection circuits in color TV receivers. This device features exceptional tolerance to

Silicon NPN Transistor Horizontal Deflection w/Internal Damper Diode

Features: • High Breakdown Voltage: VCES = 1500V • Built–In Damper Diode • Isolated TO3PFM Type Package Applications: • TV/Character Display Horizontal Deflection Output

Silicon NPN Transistor CRT Horizontal Deflection, High Voltage, Fast Switching

Features: • High Breakdown Voltage Capability • Fully Insulated Package for Easy Mounting • Low Saturation Voltage • High Switching Speed Applications: • Horizontal Deflection Stage in Standard and High Resolution Displays for TVs and Monitors • Switching Power Supply for TV

Silicon NPN Transistor Darlington

Features: • High Voltage, High Forward and Clamped Reverse Energy • 10A Peak Collector Current • 80W at +25°C Case Temperature • Collector–Emitter Sustaining Voltage: 400V Min at 7A

Silicon NPN Transistor CRT Horizontal Deflection, High Voltage, High Speed Switch

Description: The NTE2639 is a high voltage, high speed switching silicon NPN transistor in a plastgic full–pack envelope designed for use in horizontal deflection circuits of color TV receivers.

High Voltage (Plate) & Filament - 32 VA to 454 VA

Features Primary 115 VAC, 60 Hz. - except as noted For universal primaries and/or 50/60 Hz. operation and other output voltagecombinations please see our 300 Series Enclosed, 4 hole, chassis mount. Minimum 6 long leads. Units can be run full wave bridge or full wave C.T. Class A insulation (

High Voltage (Plate) & Filament - 32 VA to 454 VA

Features Primary 115 VAC, 60 Hz. - except as noted For universal primaries and/or 50/60 Hz. operation and other output voltagecombinations please see our 300 Series Enclosed, 4 hole, chassis mount. Minimum 6 long leads. Units can be run full wave bridge or full wave C.T. Class A insulation (

Axial Lead and Cartridge Fuses - Subminiature

文件：63.81 Kbytes Page：1 Pages

Class H/K, J and R ferrule and blade fuse reducers

文件：547.66 Kbytes Page：2 Pages

3M??Lapping Film Aluminum Oxide 254X

文件：68.76 Kbytes Page：2 Pages