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型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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NTE266 | Silicon NPN Transistor Darlington Power Amplifier Features: • Forward Current Transfer Ratio: hFE = 40,000 Min • Power Dissipation: 1.33W Free–Air @ TA = +50°C • Hard Solder Mountdown Applications: • Driver, IC Driver • Regulator • Touch Switch • Audio Output • Relay Substitute • Oscillator • Servo–Amplifier | NTE | ||
Silicon NPN Transistor Horizontal Deflection Output for HDTV Features: • High Speed: tf = 0.15µs Typ • High Breakdown Voltage: VCBO = 1700V • Low Saturation Voltage: VCE(sat) = 3V Max | NTE | |||
Silicon NPN Transistor High Frequency, Low Noise RF Description: The NTE2662 is a silicon NPN type transistor in a miniature surface mount package designed for os cillator applications up to 3GHz. This device features low voltage operation, low phase noise, and high immunity to pushing effects. Features: • New Miniature Surface Mount Pac | NTE | |||
Silicon NPN Transistor Horizontal Deflection Output for High Resolution Display, Color TV Features: • High Voltage: VCBO = 1700V • Low Saturation Voltage: VCE(sat) = 3V Max • High Speed: tf = 0.1μs Typ | NTE | |||
Silicon NPN Transistor High Current Switching Features: • Adoption of FBET, MBIT process • Large Current Capacitance • Low Collector-To-Emitter Saturation Voltage • High Speed Switching • High Allowable Power Dissipation Applications: • DC-DC Converter • Relay Drivers • Lamp Drivers • Motor Drivers • Strobes | NTE | |||
Holder/No. 266 / Holder/No. 268
| Littelfuse 力特 | |||
Differential pressure transmitters Base accuracy • from 0.06 % of calibrated span (optional 0.04 %) Reliable sensing system coupled with very latest digital technologies • provides large turn down ratio up to 100:1 Comprehensive sensor choice • optimize in-use total performance and stability 10–year stability • 0.15 | ABB ABB集团 | |||
Gauge pressure transmitter low power consumption (1 to 5 V DC and HART) Base accuracy •0.15 % of calibrated span Reliable sensing system coupled with very latest digital technologies •provides large turn down ratio up to 100:1 Version for low consumption •1 to 5 V DC output with 3 mA maximum consumption Product in compliance with Directive 2011/65/UE | ABB ABB集团 | |||
T-1 3/4 STANDARD MIDGET GROOVE 文件:335.2 Kbytes Page:1 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | |||
3M??Lapping Film Aluminum Oxide 254X 文件:68.76 Kbytes Page:2 Pages | 3M |
NTE266产品属性
- 类型
描述
- 型号
NTE266
- 制造商
NTE Electronics
- 功能描述
TRANSISTOR NPN SILICON DARLINGTON 50V IC=0.5A TO-202 CASE
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NTE |
23+ |
39310 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
新 |
5 |
全新原装 货期两周 |
|||||
NTE |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
|||
24+ |
N/A |
61000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
2022+ |
1 |
全新原装 货期两周 |
NTE266规格书下载地址
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DdatasheetPDF页码索引
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