Silicon NPN Transistor High Gain Darlington Power Amp, Switch

Features: • Forward Current Transfer Ratio: hFE = 90,000 min. • Free–Air Power Dissipation: 1.33W @ TA = +50°C • Hard Solder Mountdown Applications: • Driver • Regulator • Audio Output • Relay Substitute • Touch Switch • Oscillator • IC Driver • Servo Amplifie

Bi-Polar transistor Selector Guide

Complementary Transistors

Bi-Polar transistor Selector Guide

GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays

Features ● GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process ● High reliability ● Same package as BPX 80 series Applications ● Miniature photointerrupters ● Punched tape-readers ● Industrial electronics ● For control and drive circuits

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

Enhanced, Energy Efficient, Low Power Off-line Switcher

Description TinySwitch-II integrates a 700 V power MOSFET, oscillator, high voltage switched current source, current limit and thermal shutdown circuitry onto a monolithic device. The start-up and operating power are derived directly from the voltage on the DRAIN pin, eliminating the need for a b

Enhanced, Energy Efficient, Low Power Off-line Switcher

Description TinySwitch-II integrates a 700 V power MOSFET, oscillator, high voltage switched current source, current limit and thermal shutdown circuitry onto a monolithic device. The start-up and operating power are derived directly from the voltage on the DRAIN pin, eliminating the need for a b