HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS

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丝印代码：20N03L；30V N-Channel MOSFET

Features • Ultra−Low RDS(on), Single Base, Advanced Technology • SPICE Parameters Available • Diode is Characterized for use in Bridge Circuits • IDSS and V (on)Specified at Elevated Temperatures • High Avalanche Energy Specified Typical Applications • Power Supplies • Inductive Loads •

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 31mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

MOSFET –Power, N-Channel, DPAK 20 A, 30 V

This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft recovery. Features • Ultra−Low RDS(

Power MOSFET

MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft

MOSFET –Power, N-Channel, DPAK 20 A, 30 V

This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft recovery. Features • Ultra−Low RDS(

Power MOSFET

MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 31mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET

MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft

Power MOSFET

MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft

Power MOSFET

MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

丝印代码：20N03L；30V N-Channel MOSFET

Features • Ultra−Low RDS(on), Single Base, Advanced Technology • SPICE Parameters Available • Diode is Characterized for use in Bridge Circuits • IDSS and V (on)Specified at Elevated Temperatures • High Avalanche Energy Specified Typical Applications • Power Supplies • Inductive Loads •

Power MOSFET

MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft

MOSFET –Power, N-Channel, DPAK 20 A, 30 V

This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft recovery. Features • Ultra−Low RDS(

Power MOSFET

Power MOSFET 20 Amps, 60 Volts, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Lower Capacitances • Lower Total

Power MOSFET 20 Amps, 60 Volts, N?묬hannel DPAK

MOSFET – Power, N-Channel, DPAK 20 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Lower RDS(on) • Lower VDS(on) • Lower Capacitances • Lower Total Gate Charge • Lower and Tighter VSD

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 46mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET

Power MOSFET 20 Amps, 60 Volts, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Lower Capacitances • Lower Total

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 46mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET

Power MOSFET 20 Amps, 60 Volts, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Lower Capacitances • Lower Total

Power MOSFET

Power MOSFET 20 Amps, 60 Volts, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Lower Capacitances • Lower Total

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 48mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

MOSFET - Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV20N06L • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Po

60V N-Channel MOSFET

Features VDS 60V ID (at VGS=10V) 20A RDS(ON) (at VGS=4.5V)

60V N-Channel MOSFET

Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuits VDS ID (at VGS=10V) RDS(ON) (at VGS=4.5V) 60V 20A

MOSFET - Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV20N06L • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Po

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 48mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

MOSFET - Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV20N06L • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Po

MOSFET - Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV20N06L • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Po

MOSFET - Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV20N06L • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Po

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 30A RDS(ON)

60V N-Channel MOSFET

Features VDS 60V ID (at VGS=10V) 20A RDS(ON) (at VGS=4.5V)

60V N-Channel MOSFET

Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuits VDS ID (at VGS=10V) RDS(ON) (at VGS=4.5V) 60V 20A

Power MOSFET

Power MOSFET 20 Amps, 60 Volts, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Lower Capacitances • Lower Total

Power MOSFET

Power MOSFET 20 Amps, 60 Volts, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Lower Capacitances • Lower Total

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -15A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 48mΩ(Max)@VGS= -5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -15A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 48mΩ(Max)@VGS= -5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

P-channel Enhancement Mode Power MOSFET

Features  VDS= -60V, ID= -20A RDS(ON)

N-Channel 30-V (D-S) MOSFET

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