NTD20N06价格

参考价格:¥1.6098

型号:NTD20N06LT4G 品牌:ONSemi 备注:这里有NTD20N06多少钱,2025年最近7天走势,今日出价,今日竞价,NTD20N06批发/采购报价,NTD20N06行情走势销售排行榜,NTD20N06报价。
型号 功能描述 生产厂家 企业 LOGO 操作
NTD20N06

Power MOSFET

Power MOSFET 20 Amps, 60 Volts, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Lower Capacitances • Lower Total

ONSEMI

安森美半导体

NTD20N06

Power MOSFET 20 Amps, 60 Volts, N?묬hannel DPAK

MOSFET – Power, N-Channel, DPAK 20 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Lower RDS(on) • Lower VDS(on) • Lower Capacitances • Lower Total Gate Charge • Lower and Tighter VSD

ONSEMI

安森美半导体

NTD20N06

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 46mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

NTD20N06

Power MOSFET 20 Amps, 60 Volts, N?묬hannel DPAK

文件:162.77 Kbytes Page:7 Pages

ONSEMI

安森美半导体

NTD20N06

单 N 沟道功率 MOSFET 60V,20A,46mΩ

ONSEMI

安森美半导体

Power MOSFET

Power MOSFET 20 Amps, 60 Volts, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Lower Capacitances • Lower Total

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 46mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Power MOSFET

Power MOSFET 20 Amps, 60 Volts, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Lower Capacitances • Lower Total

ONSEMI

安森美半导体

Power MOSFET

Power MOSFET 20 Amps, 60 Volts, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Lower Capacitances • Lower Total

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 48mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

MOSFET - Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV20N06L • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Po

ONSEMI

安森美半导体

60V N-Channel MOSFET

Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuits VDS ID (at VGS=10V) RDS(ON) (at VGS=4.5V) 60V 20A

UMW

友台半导体

60V N-Channel MOSFET

Features VDS 60V ID (at VGS=10V) 20A RDS(ON) (at VGS=4.5V)

EVVOSEMI

翊欧

MOSFET - Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV20N06L • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Po

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 48mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

MOSFET - Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV20N06L • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Po

ONSEMI

安森美半导体

MOSFET - Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV20N06L • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Po

ONSEMI

安森美半导体

60V N-Channel MOSFET

Features VDS 60V ID (at VGS=10V) 20A RDS(ON) (at VGS=4.5V)

EVVOSEMI

翊欧

60V N-Channel MOSFET

Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuits VDS ID (at VGS=10V) RDS(ON) (at VGS=4.5V) 60V 20A

UMW

友台半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 30A RDS(ON)

Bychip

百域芯

MOSFET - Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV20N06L • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Po

ONSEMI

安森美半导体

Power MOSFET

Power MOSFET 20 Amps, 60 Volts, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Lower Capacitances • Lower Total

ONSEMI

安森美半导体

Power MOSFET

Power MOSFET 20 Amps, 60 Volts, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Lower Capacitances • Lower Total

ONSEMI

安森美半导体

Power MOSFET 20 Amps, 60 Volts, N?묬hannel DPAK

文件:162.77 Kbytes Page:7 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

文件:960.08 Kbytes Page:7 Pages

VBSEMI

微碧半导体

N-Channel 60 V (D-S) MOSFET

文件:960.08 Kbytes Page:7 Pages

VBSEMI

微碧半导体

N-Channel 60-V (D-S) MOSFET

文件:897.01 Kbytes Page:6 Pages

VBSEMI

微碧半导体

N-Channel 60-V (D-S) MOSFET

文件:897.05 Kbytes Page:6 Pages

VBSEMI

微碧半导体

N-Channel 60-V (D-S) MOSFET

文件:897 Kbytes Page:6 Pages

VBSEMI

微碧半导体

单 N 沟道,逻辑电平,功率 MOSFET,60V,20A,48mΩ

ONSEMI

安森美半导体

Power MOSFET 20 Amps, 60 Volts, Logic Level

文件:89.95 Kbytes Page:12 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:127.87 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:127.87 Kbytes Page:8 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

文件:960.09 Kbytes Page:7 Pages

VBSEMI

微碧半导体

Power MOSFET 20 Amps, 60 Volts, Logic Level

文件:89.95 Kbytes Page:12 Pages

ONSEMI

安森美半导体

Power MOSFET 20 Amps, 60 Volts Logic Level, N?묬hannel DPAK

文件:128.039 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:127.87 Kbytes Page:8 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

文件:960.09 Kbytes Page:7 Pages

VBSEMI

微碧半导体

N-Channel 60-V (D-S) MOSFET

文件:896.99 Kbytes Page:6 Pages

VBSEMI

微碧半导体

Power MOSFET 20 Amps, 60 Volts Logic Level, N?묬hannel DPAK

文件:128.039 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:127.87 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET 20 Amps, 60 Volts, Logic Level

文件:89.95 Kbytes Page:12 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:127.87 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET 20 Amps, 60 Volts Logic Level, N?묬hannel DPAK

文件:128.039 Kbytes Page:8 Pages

ONSEMI

安森美半导体

N-Channel 6 0-V (D-S) MOSFET

文件:897.25 Kbytes Page:6 Pages

VBSEMI

微碧半导体

N-Channel 6 0-V (D-S) MOSFET

文件:897.18 Kbytes Page:6 Pages

VBSEMI

微碧半导体

Power MOSFET 20 Amps, 60 Volts, N?묬hannel DPAK

文件:162.77 Kbytes Page:7 Pages

ONSEMI

安森美半导体

N-Channel 60-V (D-S) MOSFET

文件:896.95 Kbytes Page:6 Pages

VBSEMI

微碧半导体

60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

UMW

友台半导体

60V N-Channel Enhancement Mode Power MOSFET

General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

EVVOSEMI

翊欧

N-Channel 60-V (D-S) MOSFET

文件:897.38 Kbytes Page:6 Pages

VBSEMI

微碧半导体

20A mps,60 Volts N-CHANNEL MOSFET

文件:193.72 Kbytes Page:2 Pages

CHONGQING

平伟实业

Fast Switching

文件:67.37 Kbytes Page:2 Pages

ISC

无锡固电

NTD20N06产品属性

  • 类型

    描述

  • 型号

    NTD20N06

  • 功能描述

    MOSFET 60V 20A N-Channel

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-12-26 19:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
25+
TO-252
37729
ON/安森美全新特价NTD20N06T4G即刻询购立享优惠#长期有货
ON/安森美
2450+
TO-252
9850
只做原装正品现货或订货假一赔十!
ON
23+
TO-252
2500
正规渠道,只有原装!
ON/安森美
2042+
TO252-3
2500
原装现货 价格优势
ON
25+
TO-252
6000
全新原装现货、诚信经营!
ON/安森美
2025+
TO-252
3500
原装进口价格优 请找坤融电子!
onsemi(安森美)
24+
TO-252
9555
支持大陆交货,美金交易。原装现货库存。
ON
21+
TO252-3
10000
十年信誉,只做原装,有挂就有现货!
UMW 友台
23+
TO-252
10000
原装正品,实单请联系
ON
2024+
TO-252
25000
绝对全新原装,现货热卖

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