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位置：首页 > IC中文资料第914页 > NTD20N03

NTD20N03价格

参考价格：￥2.0547

型号：NTD20N03L27T4G 品牌：ONSemi 备注：这里有NTD20N03多少钱，2025年最近7天走势，今日出价，今日竞价，NTD20N03批发/采购报价，NTD20N03行情走势销售排行榜，NTD20N03报价。
型号 功能描述 生产厂家 企业 LOGO 操作
NTD20N03

30V N-Channel MOSFET

Features • Ultra−Low RDS(on), Single Base, Advanced Technology • SPICE Parameters Available • Diode is Characterized for use in Bridge Circuits • IDSS and V (on)Specified at Elevated Temperatures • High Avalanche Energy Specified Typical Applications • Power Supplies • Inductive Loads •

UMW

友台半导体

NTD20N03L27

Power MOSFET

MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft

ONSEMI

安森美半导体

NTD20N03L27

MOSFET –Power, N-Channel, DPAK 20 A, 30 V

This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft recovery. Features • Ultra−Low RDS(

ONSEMI

安森美半导体

NTD20N03L27

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 31mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

NTD20N03L27_V01

MOSFET –Power, N-Channel, DPAK 20 A, 30 V

This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft recovery. Features • Ultra−Low RDS(

ONSEMI

安森美半导体

NTD20N03L27-1

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 31mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

NTD20N03L27-1

Power MOSFET

MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft

ONSEMI

安森美半导体

NTD20N03L27-1G

Power MOSFET

MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft

ONSEMI

安森美半导体

NTD20N03L27G

Power MOSFET

MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft

ONSEMI

安森美半导体

NTD20N03L27T4

Power MOSFET

MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft

ONSEMI

安森美半导体

NTD20N03L27T4

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

Bychip

百域芯

NTD20N03L27T4G

30V N-Channel MOSFET

Features • Ultra−Low RDS(on), Single Base, Advanced Technology • SPICE Parameters Available • Diode is Characterized for use in Bridge Circuits • IDSS and V (on)Specified at Elevated Temperatures • High Avalanche Energy Specified Typical Applications • Power Supplies • Inductive Loads •

UMW

友台半导体

NTD20N03L27T4G

Power MOSFET

MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft

ONSEMI

安森美半导体

NTD20N03L27T4G

MOSFET –Power, N-Channel, DPAK 20 A, 30 V

This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft recovery. Features • Ultra−Low RDS(

ONSEMI

安森美半导体

NTD20N03G

N-Channel 30-V (D-S) MOSFET

文件：1.01617 Mbytes Page：8 Pages

VBSEMI

微碧半导体

NTD20N03HL

N-Channel 30-V (D-S) MOSFET

文件：1.01525 Mbytes Page：8 Pages

VBSEMI

微碧半导体

NTD20N03L27

N-Channel 30-V (D-S) MOSFET

文件：1.01525 Mbytes Page：8 Pages

VBSEMI

微碧半导体

NTD20N03L27

单 N 沟道逻辑电平功率 MOSFET 30V，20A，27mΩ

ONSEMI

安森美半导体

NTD20N03L27

Power MOSFET

文件：100.86 Kbytes Page：5 Pages

ONSEMI

安森美半导体

NTD20N03L27_14

Power MOSFET

文件：100.86 Kbytes Page：5 Pages

ONSEMI

安森美半导体

NTD20N03L27-1G

N-Channel 30-V (D-S) MOSFET

文件：959.99 Kbytes Page：8 Pages

VBSEMI

微碧半导体

NTD20N03L27G

N-Channel 30-V (D-S) MOSFET

文件：1.01524 Mbytes Page：8 Pages

VBSEMI

微碧半导体

NTD20N03L27T4G

Power MOSFET

文件：100.86 Kbytes Page：5 Pages

ONSEMI

安森美半导体

NTD20N03L27T4G

N-Channel 30-V (D-S) MOSFET

文件：1.01581 Mbytes Page：8 Pages

VBSEMI

微碧半导体

NTD20N03LT4G

N-Channel 30-V (D-S) MOSFET

文件：1.01525 Mbytes Page：8 Pages

VBSEMI

微碧半导体

NTD20N03RT4G

N-Channel 30-V (D-S) MOSFET

文件：1.01526 Mbytes Page：8 Pages

VBSEMI

微碧半导体

20N03

N-Channel 30-V (D-S) MOSFET

文件：1.01516 Mbytes Page：8 Pages

VBSEMI

微碧半导体

20N03

isc N-Channel MOSFET Transistor

文件：288.56 Kbytes Page：2 Pages

ISC

无锡固电

20N03HL

N-Channel 30-V (D-S) MOSFET

文件：1.01546 Mbytes Page：8 Pages

VBSEMI

微碧半导体

20N03J

N-Channel 30-V (D-S) MOSFET

文件：959.95 Kbytes Page：8 Pages

VBSEMI

微碧半导体

20N03L

N-Channel 30-V (D-S) MOSFET

文件：1.01522 Mbytes Page：8 Pages

VBSEMI

微碧半导体

NTD20N03产品属性

  • 类型

    描述

  • 型号

    NTD20N03

  • 功能描述

    MOSFET 30V 20A N-Channel

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

NTD20N03供应商更多...

更新时间：2025-12-27 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
NTD20N03
ON/安森美
24+
NA/
1290
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市高捷芯城科技有限公司
NTD20N03L27G
ON(安森美)
24+
标准封装
8048
全新原装正品/价格优惠/质量保障
询价
深圳市纳艾斯科技有限公司
NTD20N03G
O
24+
DPAK
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
深圳市华斯顿科技有限公司
NTD20N03HL
ON原装
25+23+
TO-251
23429
绝对原装正品全新进口深圳现货
询价
中天科工半导体（深圳）有限公司
NTD20N03L27T4G
ONSEMI/安森美
25+
标准
41916
ONSEMI/安森美原装特价NTD20N03L27T4G即刻询购立享优惠#长期有货
询价
深圳市天芯威科技有限公司
NTD20N03HL
ONSemi
24+
TO-251
8000
新到现货，只做全新原装正品
询价
贸泽芯城（深圳）电子科技有限公司
NTD20N03HL
ON/安森美
23+
TO-252
38790
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
深圳市赛特兴科技有限公司
NTD20N03HL
ON
23+
TO-251
62
正规渠道,只有原装!
询价
深圳市勤思达科技有限公司
NTD20N03HL
ON/
24+
TO-251
5000
全新原装正品,现货销售
询价
深圳市威雅利发展有限公司
NTD20N03HL
ON
15+
TO-251
62
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价

NTD20N03芯片相关品牌

NTD20N03规格书下载地址

NTD20N03参数引脚图相关

NTD20N03数据表相关新闻

DdatasheetPDF页码索引

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