60V N-Channel MOSFET

Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuits VDS ID (at VGS=10V) RDS(ON) (at VGS=4.5V) 60V 20A

MOSFET - Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV20N06L • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Po

60V N-Channel MOSFET

Features VDS 60V ID (at VGS=10V) 20A RDS(ON) (at VGS=4.5V)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 48mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

单 N 沟道，逻辑电平，功率 MOSFET，60V，20A，48mΩ

Power MOSFET 20 Amps, 60 Volts, Logic Level

文件：89.95 Kbytes Page：12 Pages

Power MOSFET

文件：127.87 Kbytes Page：8 Pages

MOSFET - Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV20N06L • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Po

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 48mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

MOSFET - Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV20N06L • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Po

MOSFET - Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV20N06L • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Po

MOSFET - Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV20N06L • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Po

60V N-Channel MOSFET

Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuits VDS ID (at VGS=10V) RDS(ON) (at VGS=4.5V) 60V 20A

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 30A RDS(ON)

60V N-Channel MOSFET

Features VDS 60V ID (at VGS=10V) 20A RDS(ON) (at VGS=4.5V)

Power MOSFET

文件：127.87 Kbytes Page：8 Pages

N-Channel 60 V (D-S) MOSFET

文件：960.09 Kbytes Page：7 Pages

Power MOSFET 20 Amps, 60 Volts, Logic Level

文件：89.95 Kbytes Page：12 Pages

N-Channel 60 V (D-S) MOSFET

文件：960.09 Kbytes Page：7 Pages

Power MOSFET 20 Amps, 60 Volts Logic Level, N?묬hannel DPAK

文件：128.039 Kbytes Page：8 Pages

Power MOSFET

文件：127.87 Kbytes Page：8 Pages

Power MOSFET

文件：127.87 Kbytes Page：8 Pages

Power MOSFET 20 Amps, 60 Volts Logic Level, N?묬hannel DPAK

文件：128.039 Kbytes Page：8 Pages

N-Channel 60-V (D-S) MOSFET

文件：896.99 Kbytes Page：6 Pages

Power MOSFET 20 Amps, 60 Volts, Logic Level

文件：89.95 Kbytes Page：12 Pages

N-Channel 6 0-V (D-S) MOSFET

文件：897.25 Kbytes Page：6 Pages

Power MOSFET 20 Amps, 60 Volts Logic Level, N?묬hannel DPAK

文件：128.039 Kbytes Page：8 Pages

Power MOSFET

文件：127.87 Kbytes Page：8 Pages

60V N-Channel Enhancement Mode Power MOSFET

General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

20A mps,60 Volts N-CHANNEL MOSFET

文件：193.72 Kbytes Page：2 Pages

Fast Switching

文件：67.37 Kbytes Page：2 Pages

N-Channel 60-V (D-S) MOSFET

文件：897.38 Kbytes Page：6 Pages