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NTD20N03L27价格
参考价格：￥2.0547
型号：NTD20N03L27T4G 品牌：ONSemi 备注：这里有NTD20N03L27多少钱，2025年最近7天走势，今日出价，今日竞价，NTD20N03L27批发/采购报价，NTD20N03L27行情走势销售排行榜，NTD20N03L27报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NTD20N03L27 | Power MOSFET MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft | ONSEMI 安森美半导体 |   | |
NTD20N03L27 | MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft recovery. Features • Ultra−Low RDS( | ONSEMI 安森美半导体 | | |
NTD20N03L27 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 31mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
NTD20N03L27 | Power MOSFET 文件：100.86 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | | |
NTD20N03L27 | N-Channel 30-V (D-S) MOSFET 文件：1.01525 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | |
MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft recovery. Features • Ultra−Low RDS( | ONSEMI 安森美半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 31mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
Power MOSFET MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft | ONSEMI 安森美半导体 | | ||
Power MOSFET MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft | ONSEMI 安森美半导体 | | ||
Power MOSFET MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft | ONSEMI 安森美半导体 | | ||
Power MOSFET MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft | ONSEMI 安森美半导体 | | ||
N-channel Advanced Mode Power MOSFET Features VDS= 40V, ID= 150A RDS(ON) | Bychip 百域芯 | | ||
30V N-Channel MOSFET Features • Ultra−Low RDS(on), Single Base, Advanced Technology • SPICE Parameters Available • Diode is Characterized for use in Bridge Circuits • IDSS and V (on)Specified at Elevated Temperatures • High Avalanche Energy Specified Typical Applications • Power Supplies • Inductive Loads • | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | | ||
MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft recovery. Features • Ultra−Low RDS( | ONSEMI 安森美半导体 | | ||
Power MOSFET MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft | ONSEMI 安森美半导体 | | ||
Power MOSFET 文件：100.86 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：959.99 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.01524 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFET 文件：100.86 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.01581 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | |
NTD20N03L27产品属性
- 类型
描述
- 型号
NTD20N03L27
- 功能描述
MOSFET 30V 20A N-Channel
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
25+ |
SOT-252 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
ON/安森美 |
23+ |
SOT252 |
38796 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
ON |
22+ |
TO-252 |
3000 |
原装正品,支持实单 |
|||
ON/安森美 |
24+ |
TO-252 |
505348 |
免费送样原盒原包现货一手渠道联系 |
|||
ON/安森美 |
21+ |
TO-252-2(DPAK) |
8080 |
只做原装,质量保证 |
|||
ON |
25+ |
TO263 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
ON |
23+ |
TO-251 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
ON |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
ON |
6000 |
面议 |
19 |
DIP/SMD |
|||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
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