NTD20N03L27价格

参考价格:¥2.0547

型号:NTD20N03L27T4G 品牌:ONSemi 备注:这里有NTD20N03L27多少钱,2025年最近7天走势,今日出价,今日竞价,NTD20N03L27批发/采购报价,NTD20N03L27行情走势销售排行榜,NTD20N03L27报价。
型号 功能描述 生产厂家 企业 LOGO 操作
NTD20N03L27

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 31mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

NTD20N03L27

Power MOSFET

MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft

ONSEMI

安森美半导体

NTD20N03L27

MOSFET –Power, N-Channel, DPAK 20 A, 30 V

This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft recovery. Features • Ultra−Low RDS(

ONSEMI

安森美半导体

NTD20N03L27

Power MOSFET

文件:100.86 Kbytes Page:5 Pages

ONSEMI

安森美半导体

NTD20N03L27

N-Channel 30-V (D-S) MOSFET

文件:1.01525 Mbytes Page:8 Pages

VBSEMI

微碧半导体

NTD20N03L27

单 N 沟道逻辑电平功率 MOSFET 30V,20A,27mΩ

ONSEMI

安森美半导体

MOSFET –Power, N-Channel, DPAK 20 A, 30 V

This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft recovery. Features • Ultra−Low RDS(

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 31mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Power MOSFET

MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft

ONSEMI

安森美半导体

Power MOSFET

MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft

ONSEMI

安森美半导体

Power MOSFET

MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft

ONSEMI

安森美半导体

Power MOSFET

MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft

ONSEMI

安森美半导体

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

Bychip

百域芯

30V N-Channel MOSFET

Features • Ultra−Low RDS(on), Single Base, Advanced Technology • SPICE Parameters Available • Diode is Characterized for use in Bridge Circuits • IDSS and V (on)Specified at Elevated Temperatures • High Avalanche Energy Specified Typical Applications • Power Supplies • Inductive Loads •

UMW

友台半导体

Power MOSFET

MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft

ONSEMI

安森美半导体

MOSFET –Power, N-Channel, DPAK 20 A, 30 V

This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft recovery. Features • Ultra−Low RDS(

ONSEMI

安森美半导体

Power MOSFET

文件:100.86 Kbytes Page:5 Pages

ONSEMI

安森美半导体

N-Channel 30-V (D-S) MOSFET

文件:959.99 Kbytes Page:8 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件:1.01524 Mbytes Page:8 Pages

VBSEMI

微碧半导体

Power MOSFET

文件:100.86 Kbytes Page:5 Pages

ONSEMI

安森美半导体

N-Channel 30-V (D-S) MOSFET

文件:1.01581 Mbytes Page:8 Pages

VBSEMI

微碧半导体

NTD20N03L27产品属性

  • 类型

    描述

  • 型号

    NTD20N03L27

  • 功能描述

    MOSFET 30V 20A N-Channel

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-7 12:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
23+
TO-252-2(DPAK)
12512
公司只做原装正品,假一赔十
ON(安森美)
2511
标准封装
8000
电子元器件采购降本30%!原厂直采,砍掉中间差价
ONSEMI/安森美
25+
标准
41916
ONSEMI/安森美原装特价NTD20N03L27T4G即刻询购立享优惠#长期有货
VBsemi
24+
TO252
9000
只做原装正品 有挂有货 假一赔十
ON/安森美
25+
SOT-252
54558
百分百原装现货 实单必成 欢迎询价
ON(安森美)
24+
标准封装
8048
全新原装正品/价格优惠/质量保障
ON
6000
面议
19
DIP/SMD
ON(安森美)
25+
标准封装
8000
原装,请咨询
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
ON/安森美
23+
SOT-252
24190
原装正品代理渠道价格优势

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